IRFZ44VZLPBF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ44VZLPBF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 92 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 57 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 62 ns
Cossⓘ - Выходная емкость: 270 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: TO-262
Аналог (замена) для IRFZ44VZLPBF
IRFZ44VZLPBF Datasheet (PDF)
irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf
PD - 95947AIRFZ44VZPbFIRFZ44VZSPbFIRFZ44VZLPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 60V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12m Lead-FreeGDescriptionID = 57AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremel
irfz44vzl irfz44vzpbf irfz44vzspbf.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
irfz44vz irfz44vzs irfz44vzl.pdf
PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE
auirfz44vzstrl.pdf
PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo
auirfz44vzs.pdf
AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed
irfz44vz.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44VZIIRFZ44VZFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
irfz44vzs.pdf
Isc N-Channel MOSFET Transistor IRFZ44VZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918