LPM3413 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LPM3413
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Максимально допустимый постоянный ток стока |Id|: 3 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 12.5 ns
Выходная емкость (Cd): 75 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.095 Ohm
Тип корпуса: SOT23
LPM3413 Datasheet (PDF)
lpm3413.pdf
Preliminary Datasheet LPM3413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3413 uses advanced trench technology to -20V/2.0A,R 130m(max.)@VGS=-2.5V DS(ON) provide excellent R . This device is suitable for -20V/3A,R 95m(max.)@VGS=-4.5V DS(ON) DS(ON) using as a load switch or in PWM applications. Super high density cell
lpm3401.pdf
Preliminary Datasheet LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3401 is the P-channel logic enhancement -15V/-4.0A,RDS(ON)58m(typ.)@VGS=-10V mode power field effect transistors are produced using -15V/-3.0A,RDS(ON)68m(typ.)@VGS=-4.5V high cell density, DMOS trench technology. Super high density cell desi
lpm3406b3f.pdf
Preliminary Datasheet LPM3406 30V/3.6A N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3406 is N-channel logic enhancement mode 30V/3A, R =48m(Typ.)@VGS=4.5V DS(ON)power field effect transistor, which are produced by 30V/3.6A, R =36m(Typ.)@VGS=10V DS(ON)using high cell density, DMOS trench technology. Super high density cell d
lpm3400b3f.pdf
Preliminary Datasheet LPM3400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The LPM3400 uses advanced trench technology to 20V/5A, R 33m(max.)@VGS=4.5V DS(ON)provide excellent R , low gate charge and 20V/4A, R 52m(max.)@VGS=2.5V DS(ON) DS(ON)operation with gate voltages as low as 1.1V. This Super high density cell design for
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
