KI2312 - описание и поиск аналогов

SMD Type MOSFET N-Channel Enhancement MOSFET KI2312 Features 3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) 12 RDS(ON) 40m (VGS = 2.5V) RDS(ON) 51m (VGS = 1.8V) Absolute Maximum Ratings Ta = 25 Parameter Symbo

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312 (KI2312) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) 1 2 RDS(ON) 40m (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 51m (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain Abs

SMD Type Transistors N-Channel 20 -V (D-S) MOSFET KI2312DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features 1.8-V Rated RoHS Compliant 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8

SMD Type MOSFET N-Channel Enhancement MOSFET KI2310 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS=20V ID = 6 .5A RDS(on)= 22m @VGS=4.5V ,ID=6.5A 1 2 RDS(on)= 30m @VGS=2.5V ,ID=5.5A +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 3 D 1.Gate S 2 2.Source 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

SMD Type Transistors N-Channel 20-V (D-S) MOSFET KI2314EDS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 3 Features TrenchFET Power MOSFET ESD Protected 3000 V 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5secs Steady State Unit Drain-Source Voltage VDS 20 V Gate-S

SMD Type IC SMD Type Transistors P-Channel 40-V (D-S) MOSFET KI2319DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 TrenchFET Power MOSFET 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -40 V Gate-Source Volta

SMD Type MOSFET N-Channel Enhancement MOSFET KI2310DS SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS=20V ID = 6 .5A RDS(on)= 22m @VGS=4.5V ,ID=6.5A 1 2 +0.02 +0.1 RDS(on)= 30m @VGS=2.5V ,ID=5.5A 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati

SMD Type Transistors P-Channel 1.8-V (G-S) MOSFET KI2311DS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 TrenchFET Power MOSFETS 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5secs Steady State Unit Drain-Source Voltage VDS -8 V Gate-Source Voltage VGS 8 C

SMD Type IC SMD Type Transistors P-Channel 1.8-V (G-S) MOSFET KI2315BDS SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS 8 V Continuous