ME2307 - описание и поиск аналогов

ME2307/ME2307-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2307 is the P-Channel logic enhancement mode power field RDS(ON) 70m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 95m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

ME2306BS/ME2306BS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306BS is the N-Channel logic enhancement mode power RDS(ON) 38m @VGS=10V field effect transistor, using high cell density, DMOS trench RDS(ON) 43m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 62m @VGS=2.5V minimize on-state resistance. These

ME2305/ME2305-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2305 is the P-Channel logic enhancement mode power RDS(ON) 62m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 72m @VGS=-4.5V trench technology. This high density process is especially tailored RDS(ON) 91m @VGS=-2.5V to minimize on-state resista

ME2306N/ME2306N-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306N is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 49m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) mi

ME2301A/ ME2301A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2301A is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-4.5V effect transistors are produced using high cell density, DMOS trench RDS(ON) 95m @VGS=-2.5V technology. This high density process is especially tailored to RDS(ON) 130m @VGS=-1.8V minimize on-stat

ME2301/ME2301-G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301 is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is es

ME2303/ME2303-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2303 is the P-Channel logic enhancement mode power field RDS(ON) 75m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 100m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

ME2306S/ME2306S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON) 37m @ VGS =10V The ME2306S is the N-Channel logic enhancement mode power RDS(ON) 49m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailor

ME2302(Pb-free) N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON) 85m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 115m @VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON) 135m @VGS=1.8V resistance.

Preliminary-ME2306AN/ME2306AN-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2306AN is the N-Channel logic enhancement mode power RDS(ON) 37m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 40m @VGS=4.5V technology. This high density process is especially tailored to RDS(ON) 53m @VGS=2.5V minimize on-state r

ME2306DS/ME2306DS-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306DS is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state

ME2301DC/ME2301DC-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DC is the P-Channel logic enhancement mode power RDS(ON) 110m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 150m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell design

ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

ME2301GC/ ME2301GC-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 75m @VGS=-4.5V The ME2301GC is the P-Channel logic enhancement mode power RDS(ON) 95m @VGS=-2.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 130m @VGS=-1.8V trench technology. This high density process is especially tailored to Sup

ME2301DN/ME2301DN-G P-Channel 20V(D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES The ME2301DN is the P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density , DMOS RDS(ON) 130m @VGS=-2.5V trench technology. This high density process is especially tailored to Super high density cell desig

ME2306AS/ME2306AS-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306AS is the N-Channel logic enhancement mode power RDS(ON) 34.5m @VGS=10V field effect transistors, using high cell density, DMOS trench RDS(ON) 38m @VGS=4.5V technology.This high density process is especially tailored to RDS(ON) 50m @VGS=2.5V minimize on-state resistance.These

ME2309/ ME2309-G P-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2309 is the P-Channel logic enhancement mode power field RDS(ON) 215m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 260m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

ME2305A/ME2305A-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2305A is the P-Channel logic enhancement mode power RDS(ON) 67m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 77m @VGS=-4.5V trench technology. This high density process is especially tailored RDS(ON) 96m @VGS=-2.5V to minimize on-state resistan

ME2306D/ME2306D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME2306D is the N-Channel logic enhancement mode power RDS(ON) 31m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 52m @VGS=4.5V trench technology. This high density process is especially tailored to ESD Protected minimize on-state res

ME2302/ME2302-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2302 is the N-Channel logic enhancement mode power field RDS(ON) 85m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 115m @VGS=2.5V This high density process is especially tailored to minimize on-state RDS(ON) 130m @VGS=1.8V resistance.T

ME2301S/ME2301S-G P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 110m @VGS=-4.5V The ME2301S is the P-Channel logic enhancement mode power field RDS(ON) 150m @VGS=-2.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is espec

ME2306/ME2306-G N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 37m @VGS=10V The ME2306 is the N-Channel logic enhancement mode power field RDS(ON) 49m @VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to

ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON) 60m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 70m @VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON) 100m @VGS=2.5V minimize

ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8V mini

ME2306A/ME2306A-G N-Channel 30V (D-S)MOSFET GENERAL DESCRIPTION FEATURES The ME2306A is the N-Channel logic enhancement mode power field RDS(ON) 34.5m @VGS=10V effect transistors, using high cell density, DMOS trench technology. RDS(ON) 38m @VGS=4.5V This high density process is especially tailored to minimize on-state RDS(ON) 50m @VGS=2.5V resistance. Su

ME2308S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G