ME60N03-G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: ME60N03-G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 48.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 182 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0085 Ohm
Тип корпуса: TO-252
ME60N03-G Datasheet (PDF)
me60n03 me60n03-g.pdf

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -gGENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power RDS(ON)8.5m@VGS=10Vfield effect transistors are produced using high cell density DMOS RDS(ON)13m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre
me60n03a.pdf

ME60N03A 25V N-Channel Enhancement Mode MOSFETVDS=25V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@30A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute
me60n03.pdf

ME60N03 30V N-Channel Enhancement Mode MOSFETVDS=30V RDS(ON), Vgs@10V,Ids@30A = 8.5m RDS(ON), Vgs@4.5V,Ids@20A =13m FEATURES Advanced trench process technology High density cell design for ultra low on-resistance Specially designed for DC/DC converters and motor drivers Fully characterized avalanche voltage and current PIN CONFIGURATION (TO-252) Top View Absolute M
me60n03s me60n03s-g.pdf

ME60N03S/ME60N03S-G 30V N-Channel Enhancement Mode MOSFETVDS=30V APPLICATIONS Motherboard (V-Core) RDS(ON), Vgs@10V,Ids@30A 10m Portable Equipment RDS(ON), Vgs@4.5V,Ids@15A 18.5m DC/DC Converter Load Switch FEATURES LCD Display inverter Advanced trench process technology IPC High density cell design for ultra low on-resistance Spe
Другие MOSFET... ME50N06T , ME50N06T-G , ME50N75T , ME50N75T-G , ME50P06 , ME50P06-G , ME55N06A , ME55N06A-G , K4145 , ME60N03AS , ME60N03AS-G , ME60P06T , ME60P06T-G , ME66N04T , ME6968ED , ME6968ED-G , ME6980ED .
History: NCEP40P30Q | DMG6968UDM
History: NCEP40P30Q | DMG6968UDM



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