ME80N75F-G - описание и поиск аналогов

 

ME80N75F-G. Аналоги и основные параметры

Наименование производителя: ME80N75F-G

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 61.9 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 75 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 55.7 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40.8 ns

Cossⓘ - Выходная емкость: 435 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm

Тип корпуса: TO-220F

Аналог (замена) для ME80N75F-G

- подборⓘ MOSFET транзистора по параметрам

 

ME80N75F-G даташит

 ..1. Size:1150K  matsuki electric
 me80n75f me80n75f-g.pdf pdf_icon

ME80N75F-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 6.1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N75F-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 7.1. Size:1190K  matsuki electric
 me80n75t me80n75t-g.pdf pdf_icon

ME80N75F-G

ME80N75T / ME80N75T-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 9.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N75F-G

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

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Другие MOSFET... ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , IRF1010E , ME80N75T , ME80N75T-G , ME8107 , ME8107-G , ME8205E , ME8205E-G , ME85P03 , ME85P03-G .

History: ME8107

 

 

 

 

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