Справочник MOSFET. ME80N75F-G

 

ME80N75F-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ME80N75F-G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 61.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 55.7 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 40.8 ns
   Cossⓘ - Выходная емкость: 435 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для ME80N75F-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

ME80N75F-G Datasheet (PDF)

 ..1. Size:1150K  matsuki electric
 me80n75f me80n75f-g.pdf pdf_icon

ME80N75F-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 6.1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N75F-G

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 7.1. Size:1190K  matsuki electric
 me80n75t me80n75t-g.pdf pdf_icon

ME80N75F-G

ME80N75T / ME80N75T-GN- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

 9.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N75F-G

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

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Другие MOSFET... ME6968ED-G , ME6980ED , ME6980ED-G , ME7114S-G , ME7804S-G , ME7839S-G , ME80N08A , ME80N08A-G , IRF530 , ME80N75T , ME80N75T-G , ME8107 , ME8107-G , ME8205E , ME8205E-G , ME85P03 , ME85P03-G .

History: BLS70R600-P | BSC014N04LS | BXL4004 | P5506BVA | RFP5P15 | OSG90R1K2DF | IRF4905SPBF

 

 
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