ME95N03T - аналоги, параметры транзистора - Справочник транзисторов

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ME95N03T/ME95N03T-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6m @VGS=10V The ME95N03T is the N-Channel logic enhancement mode power RDS(ON) 9m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tail

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ME95N03/ME95N03-G N- Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME95N03 is the N-Channel logic enhancement mode power RDS(ON) 3.2m @VGS=10V field effect transistors are produced using high cell density DMOS RDS(ON) 4.2m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD

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ME95N10F/ME95N10F-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 8.5m @VGS=10V The ME95N10F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process

Другие MOSFET... ME90N03 , ME90N03-G , ME9435 , ME9435-G , ME9435A , ME9435A-G , ME95N03 , ME95N03-G , 5N60 , ME95N03T-G , MEE15N10-G , MEE3710-G , MEE4294-G , MESS84 , JCS10N60BT , JCS10N60CC , JCS10N60CT .