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JCS2N60FB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: JCS2N60FB
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 132 ns
   Cossⓘ - Выходная емкость: 37.4 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.5 Ohm
   Тип корпуса: TO-220MF

 Аналог (замена) для JCS2N60FB

 

 

JCS2N60FB Datasheet (PDF)

 ..1. Size:924K  jilin sino
 jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf

JCS2N60FB JCS2N60FB

N RN-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V RdsonVgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 6.1. Size:1813K  jilin sino
 jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

JCS2N60FB JCS2N60FB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c

 6.2. Size:1742K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

JCS2N60FB JCS2N60FB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 6.3. Size:975K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf

JCS2N60FB JCS2N60FB

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 6.4. Size:1443K  jilin sino
 jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf

JCS2N60FB JCS2N60FB

N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

 6.5. Size:201K  inchange semiconductor
 jcs2n60f.pdf

JCS2N60FB JCS2N60FB

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor JCS2N60FFEATURESLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency switching mode power supplyElectronic ballastUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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