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JCS2N70MFH MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: JCS2N70MFH
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 44 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 35 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6.5 Ohm
   Тип корпуса: TO-126F

 Аналог (замена) для JCS2N70MFH

 

 

JCS2N70MFH Datasheet (PDF)

 ..1. Size:2231K  jilin sino
 jcs2n70mfh jcs2n70vh jcs2n70rh jcs2n70ch jcs2n70fh.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N70H Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 8.0nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 7.1. Size:1933K  jilin sino
 jcs2n70v jcs2n70r 2n70nl.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N70C Package MAIN CHARACTERISTICS ID 2A VDSS 700 V Rdson-max 6.5 Vgs=10V Qg-typ 10.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge U

 9.1. Size:1199K  jilin sino
 jcs2n60.pdf

JCS2N70MFH JCS2N70MFH

N lSX:_W:WHe^vfSO{ RN-CHANNEL MOSFET JCS2N60 ;NSpe MAIN CHARACTERISTICS \ Package ID 2.0 A VDSS 600 V Rdson 5 @Vgs=10VQg 15.3 nC APPLICATIONS (u l High frequency switching

 9.2. Size:1813K  jilin sino
 jcs2n60t jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

JCS2N70MFH JCS2N70MFH

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS l High efficiency switch l mode power supplies l l Electronic lamp ballasts l LED based on half bridge l LED power supplie FEATURES l Low gate c

 9.3. Size:1225K  jilin sino
 jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V RdsonVgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.4. Size:1742K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60c jcs2n60f.pdf

JCS2N70MFH JCS2N70MFH

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 9.5. Size:1571K  jilin sino
 jcs2n65v jcs2n65r jcs2n65c jcs2n65f.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.6. Size:1046K  jilin sino
 jcs2n95va jcs2n95ra.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N95A MAIN CHARACTERISTICS Package ID 2.0 A VDSS 950 V RdsonVgs=10V 4.5 -Max Qg-Typ 14.5nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power suppli

 9.7. Size:1161K  jilin sino
 jcs2n65e.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N65E Package MAIN CHARACTERISTICS ID 2A VDSS 650V Rdson-max 5.5 Vgs=10V Qg-Typ 6.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED p

 9.8. Size:924K  jilin sino
 jcs2n60vb jcs2n60rb jcs2n60cb jcs2n60fb jcs2n60mb jcs2n60mfb.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N60B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V RdsonVgs=10V 4.5 -MAX Qg-TYP 5.9nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.9. Size:975K  jilin sino
 jcs2n60t jcs2n60mf jcs2n60v jcs2n60r jcs2n60n jcs2n60c jcs2n60f.pdf

JCS2N70MFH JCS2N70MFH

R JCS2N60C JCS2N60C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max5.0 Vgs=10V Qg-typ 8.1 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power supplie FEATURES

 9.10. Size:572K  jilin sino
 jcs2n60mb jcs2n60mfb.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFETJCS2N60MFB MAIN CHARACTERISTICS Package 2.0 A ID 600 V VDSS RdsonVgs=10V 5.0 6.0 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 9.11. Size:990K  jilin sino
 jcs2n65fc.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N65C MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson_max5.5 Vgs=10V Qg-typ 8.4 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 9.12. Size:1443K  jilin sino
 jcs2n60r jcs2n60v jcs2n60c jcs2n60f.pdf

JCS2N70MFH JCS2N70MFH

N RN-CHANNEL MOSFET JCS2N60 MAIN CHARACTERISTICS Package ID 2.0 A VDSS 600 V Rdson-max 5 Vgs=10V Qg 15.3 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS FEATURES

 9.13. Size:201K  inchange semiconductor
 jcs2n60f.pdf

JCS2N70MFH JCS2N70MFH

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor JCS2N60FFEATURESLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency switching mode power supplyElectronic ballastUPSABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

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