150A40VKNX2804AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =3.0m(typ.)@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gat

150A40VN-CHANNEL MOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advanced Trench MOS technology Excellent QgxRDS(on) product(FOM) Extremely low on-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. Pin configurationPin Func

150A40VN-CHANNELMOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advancedTrench MOStechnology Excellent QgxRDS(on) product(FOM) Extremely lowon-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. PinconfigurationPin Function1 Gate2 Drain3 S

150A30VKNX2803AN-CHANNEL MOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@ V =10VDS(on) GS Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely l

150A30VKNX2803AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =2.2mtyp.@V =10VDS(on) GS LowOn-Resistance Fast Switching 100%AvalancheTested RepetitiveAvalancheAllowed up toTjmax Lead-Free, RoHSCompliant2. FeaturesKNX2803A designed by the trench processing techniques to achieve extremely low on-resistance.Addition