LBSS138WT1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LBSS138WT1G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.15 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 12 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
Тип корпуса: SOT323
Аналог (замена) для LBSS138WT1G
LBSS138WT1G Datasheet (PDF)
lbss138wt1g s-lbss138wt1g.pdf

LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss138lt1g s-lbss138lt1g.pdf

LESHAN RADIO COMPANY, LTD.Power MOSFETLBSS138LT1G200 mAmps, 50 Volts S-LBSS138LT1GNChannel SOT233Typical applications are dcdc converters, power management inportable and batterypowered products such as computers, printers,1PCMCIA cards, cellular and cordless telephones.2 Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applicat
lbss139lt1g lbss139lt3g.pdf

LBSS139LT1GS-LBSS139LT1GPower MOSFET200 mAmps, 50 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss139dw1t1g lbss139dw1t3g.pdf

LBSS139DW1T1GS-LBSS139DW1T1GPower MOSFET200 mAmps, 50 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low threshold voltage (VGS(t
Другие MOSFET... L2N7002SWT1G , S-L2N7002SWT1G , S-L2SK3018WT1G , L2SK801LT1G , LBSS123LT1G , S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , 2SK3878 , S-LBSS138WT1G , LBSS139DW1T1G , LBSS139DW1T3G , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G , S-LBSS260DW1T1G , LBSS8402DW1T1G .
History: CTD06N017 | TPCA8009-H | P3606HK | NVMFS5C646NL | HM18N40F | AO6801E
History: CTD06N017 | TPCA8009-H | P3606HK | NVMFS5C646NL | HM18N40F | AO6801E



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
13003 transistor | c458 transistor | 2sc1775 | 2n1305 | 2sc5242 | irf540 equivalent | mp1620 transistor equivalent | 2sc945 transistor