LBSS139LT3G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LBSS139LT3G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.225 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
Cossⓘ - Выходная емкость: 3.5 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.5 Ohm
Тип корпуса: SOT23
Аналог (замена) для LBSS139LT3G
LBSS139LT3G Datasheet (PDF)
lbss139lt1g lbss139lt3g.pdf

LBSS139LT1GS-LBSS139LT1GPower MOSFET200 mAmps, 50 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Low threshold voltage (VGS(th):
lbss139lt1g.pdf

LBSS139LT1Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG
lbss139dw1t1g lbss139dw1t3g.pdf

LBSS139DW1T1GS-LBSS139DW1T1GPower MOSFET200 mAmps, 50 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.Low threshold voltage (VGS(t
lbss138wt1g s-lbss138wt1g.pdf

LBSS138WT1GS-LBSS138WT1GPower MOSFET200 mAmps, 50 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Low threshold voltage (VGS(th):
Другие MOSFET... S-LBSS123LT1G , LBSS138LT1G , S-LBSS138LT1G , LBSS138WT1G , S-LBSS138WT1G , LBSS139DW1T1G , LBSS139DW1T3G , LBSS139LT1G , 2N7000 , LBSS260DW1T1G , S-LBSS260DW1T1G , LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , S-LBSS84DW1T1G , LBSS84ELT1G , S-LBSS84ELT1G .
History: GSM7002 | SSM4500GM | AON7532E | 2SK1430 | SLF65R700S2 | HSS3400A
History: GSM7002 | SSM4500GM | AON7532E | 2SK1430 | SLF65R700S2 | HSS3400A



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
irf540 equivalent | mp1620 transistor equivalent | 2sc945 transistor | c2073 transistor | ac176 transistor | mpsa20 | irfp264 | ksc2690