S-LBSS84DW1T1G - описание и поиск аналогов

 

S-LBSS84DW1T1G. Аналоги и основные параметры

Наименование производителя: S-LBSS84DW1T1G

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.38 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.13 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.6 ns

Cossⓘ - Выходная емкость: 20 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 10 Ohm

Тип корпуса: SOT363

Аналог (замена) для S-LBSS84DW1T1G

- подборⓘ MOSFET транзистора по параметрам

 

S-LBSS84DW1T1G даташит

 ..1. Size:500K  lrc
lbss84dw1t1g s-lbss84dw1t1g.pdfpdf_icon

S-LBSS84DW1T1G

LESHAN RADIO COMPANY, LTD. Power MOSFET mAmps, 50 Vo ts 130 P Channel SC88 LBSS84DW1T1G S-LBSS84DW1T1G These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc dc converters, load switching, power management in portable and battery powered products such as compute

 6.1. Size:611K  lrc
lbss84wt1g s-lbss84wt1g.pdfpdf_icon

S-LBSS84DW1T1G

LBSS84WT1G S-LBSS84WT1G Power MOSFET 130 mA, 50V P Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Energy efficient 2. DEVICE MARKING AND OR

 6.2. Size:477K  lrc
lbss84lt1g s-lbss84lt1g.pdfpdf_icon

S-LBSS84DW1T1G

LBSS84LT1G S-LBSS84LT1G Power MOSFET 130 mA, 50V P Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. Energy efficient 2. DEVICE MARKING AND O

 6.3. Size:553K  lrc
lbss84elt1g s-lbss84elt1g.pdfpdf_icon

S-LBSS84DW1T1G

LBSS84ELT1G S-LBSS84ELT1G Power MOSFET 60V P Channel 1. FEATURES Advanced trench cell design. High speed switch. G-S ESD Protected 1000V Pb-Free Package is available. We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change re

Другие MOSFET... LBSS139DW1T3G , LBSS139LT1G , LBSS139LT3G , LBSS260DW1T1G , S-LBSS260DW1T1G , LBSS8402DW1T1G , S-LBSS8402DW1T1G , LBSS84DW1T1G , IRLB4132 , LBSS84ELT1G , S-LBSS84ELT1G , SLD2N65UZ , SLU2N65UZ , SLD3101 , SLD5N50S2 , SLU5N50S2 , SLD5N65S .

History: S-LBSS138WT1G | VS4620DP-G

 

 

 

 

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