LBSS84ELT1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LBSS84ELT1G
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.225 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.13 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 4 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
Тип корпуса: SOT23
Аналог (замена) для LBSS84ELT1G
LBSS84ELT1G Datasheet (PDF)
lbss84elt1g s-lbss84elt1g.pdf
LBSS84ELT1GS-LBSS84ELT1GPower MOSFET 60V PChannel1. FEATURESAdvanced trench cell design.High speed switch.G-S ESD Protected: 1000VPb-Free Package is available.We declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change re
lbss84wt1g s-lbss84wt1g.pdf
LBSS84WT1GS-LBSS84WT1GPower MOSFET130 mA, 50V PChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND OR
lbss84lt1g s-lbss84lt1g.pdf
LBSS84LT1GS-LBSS84LT1GPower MOSFET130 mA, 50V PChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.Energy efficient2. DEVICE MARKING AND O
lbss84dw1t1g s-lbss84dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Power MOSFET mAmps, 50 Vots130PChannel SC88LBSS84DW1T1GS-LBSS84DW1T1GThese miniature surface mount MOSFETs reduce power lossconserve energy, making this device ideal for use in small powermanagement circuitry. Typical applications are dcdc converters, loadswitching, power management in portable and batterypoweredproducts such as compute
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ASDM30P30CTD | IPDD60R050G7 | 2SK3667
History: ASDM30P30CTD | IPDD60R050G7 | 2SK3667
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918