SLD65R420S2 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SLD65R420S2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 87 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 37 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO252
Аналог (замена) для SLD65R420S2
SLD65R420S2 Datasheet (PDF)
sld65r420s2 slu65r420s2.pdf

SLD65R420S2/SLU65R420S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 650V, RDS(on)typ= 0.33@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 23nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe
sld65r380e7c.pdf

SLD65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi
sld65r280e7c.pdf

SLD65R280E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A, 650V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchi
sld65r950s2.pdf

SLD65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h
Другие MOSFET... SLD5N50S2 , SLU5N50S2 , SLD5N65S , SLU5N65S , SLD60R380S2 , SLU60R380S2 , SLD60R650S2 , SLU60R650S2 , IRLZ44N , SLU65R420S2 , SLD65R700S2 , SLU65R700S2 , SLD65R950S2 , SLD70R420S2 , SLU70R420S2 , SLD70R600S2 , SLU70R600S2 .
History: STP60NF10 | 2SK2908-01L | IPZA60R045P7 | WMJ28N65F2 | NCE25P60K | 30N06L-TF1-T | PMV90EN
History: STP60NF10 | 2SK2908-01L | IPZA60R045P7 | WMJ28N65F2 | NCE25P60K | 30N06L-TF1-T | PMV90EN



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