Справочник MOSFET. SLU80R850SJ

 

SLU80R850SJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SLU80R850SJ
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 63 W
   Предельно допустимое напряжение сток-исток |Uds|: 800 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 7 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 25 nC
   Время нарастания (tr): 10 ns
   Выходная емкость (Cd): 110 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm
   Тип корпуса: TO251

 Аналог (замена) для SLU80R850SJ

 

 

SLU80R850SJ Datasheet (PDF)

 ..1. Size:614K  maple semi
sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf

SLU80R850SJ
SLU80R850SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -7A, 800V, RDS(on) typ.= 0.8@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been es

 8.1. Size:626K  maple semi
sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf

SLU80R850SJ
SLU80R850SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -11A, 800V, RDS(on) typ.= 0.46@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been

 8.2. Size:1048K  maple semi
sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdf

SLU80R850SJ
SLU80R850SJ

SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -15A, 800V, RDS(on) typ.= 0.34@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCE60NF730I

 

 
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