SLB80R850SJ
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SLB80R850SJ
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 63
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 7
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 25
nC
trⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 110
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85
Ohm
Тип корпуса:
TO263
Аналог (замена) для SLB80R850SJ
SLB80R850SJ
Datasheet (PDF)
..1. Size:614K maple semi
sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf 
SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -7A, 800V, RDS(on) typ.= 0.8@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been es
8.1. Size:626K maple semi
sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf 
SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -11A, 800V, RDS(on) typ.= 0.46@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been
8.2. Size:634K maple semi
slp80r240sj slf80r240sj slb80r240sj.pdf 
SLB/F/P80R240SJ800V N-Channel MOSFETFeaturesGeneral DescriptionFeatures - 20A, 800V, RDS(on) typ.= 0.22@VGS = 10 VThis Power MOSFET is produced using Maple semisAdvanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty
8.3. Size:1048K maple semi
sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdf 
SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -15A, 800V, RDS(on) typ.= 0.34@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been
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