Справочник MOSFET. SLB80R850SJ

 

SLB80R850SJ Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SLB80R850SJ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 63 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
   Тип корпуса: TO263
 

 Аналог (замена) для SLB80R850SJ

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLB80R850SJ Datasheet (PDF)

 ..1. Size:614K  maple semi
sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdfpdf_icon

SLB80R850SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -7A, 800V, RDS(on) typ.= 0.8@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been es

 8.1. Size:626K  maple semi
sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdfpdf_icon

SLB80R850SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -11A, 800V, RDS(on) typ.= 0.46@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been

 8.2. Size:634K  maple semi
slp80r240sj slf80r240sj slb80r240sj.pdfpdf_icon

SLB80R850SJ

SLB/F/P80R240SJ800V N-Channel MOSFETFeaturesGeneral DescriptionFeatures - 20A, 800V, RDS(on) typ.= 0.22@VGS = 10 VThis Power MOSFET is produced using Maple semisAdvanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty

 8.3. Size:1048K  maple semi
sld80r380sj slu80r380sj slp80r380sj slf80r380sj slb80r380sj sli80r380sj.pdfpdf_icon

SLB80R850SJ

SLD80R380SJ,SLU80R380SJ,SLP80R380SJ SLF80R380SJ, SLB80R380SJ, SLI80R380SJ 800V N-Channel MOSFET FeaturesGeneral Description Features -15A, 800V, RDS(on) typ.= 0.34@VGS = 10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been

Другие MOSFET... SLP80R500SJ , SLF80R500SJ , SLB80R500SJ , SLI80R500SJ , SLD80R850SJ , SLU80R850SJ , SLP80R850SJ , SLF80R850SJ , IRF520 , SLI80R850SJ , SLF3101 , SLP3101 , SLF50R140SJ , SLP50R140SJ , SLF60R080SS , SLF60R160S2 , SLF60R650S2 .

History: 2N3956 | SVF2N60RDTR | 6N60KG-TMS4-T | HM60N05 | CHM2401JGP | 1N65L-TM3-T | CMLDM7002A

 

 
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