SLF10N65C - аналоги, даташиты, параметры транзистора

SLF10N65C Datasheet (PDF)

..1. Size:1189K maple semi
slp10n65c slf10n65c.pdf pdf_icon

SLP10N65C / SLF10N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ. = 0.678@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 38nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchi

6.1. Size:666K maple semi
slp10n65s slf10n65s.pdf pdf_icon

LEAD FREEPbRoHSSLP10N65S/ SLF10N65S650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on) typ=0.8@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 28.5nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switchi

6.2. Size:2068K maple semi
slf10n65sv.pdf pdf_icon

SLF10N65SV650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 10A*, 650V, RDS(on),typ =0.81planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 27nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

6.3. Size:978K maple semi
slp10n65a slf10n65a.pdf pdf_icon

LEAD FREEPbRoHSSLP10N65A/SLF10N65A650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 10A, 650V, RDS(on)Typ = 0.745@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 19nC)This advanced technology has been especially tailored - Low Crss ( typical 5.3pF)to minimize on-state resistance, provide superi

Другие MOSFET... SLF65R700S2 , SLF65R950S2 , SLH60R080SS , SLP10N60C , SLF10N60C , SLP10N65A , SLF10N65A , SLP10N65C , BS170 , SLP10N65S , SLF10N65S , SLP12N60C , SLF12N60C , SLP12N65C , SLF12N65C , SLP13N50A , SLF13N50A .