SLF60R190S2 - аналоги и даташиты транзистора

 

SLF60R190S2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLF60R190S2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 67 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SLF60R190S2

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLF60R190S2 Datasheet (PDF)

 ..1. Size:960K  maple semi
 slp60r190s2 slf60r190s2.pdf pdf_icon

SLF60R190S2

SLP60R190S2/SLF60R190S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 20A, 600V, RDS(on)typ= 0.16@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 39nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe

 7.1. Size:461K  maple semi
 slf60r160s2.pdf pdf_icon

SLF60R190S2

SLF60R160S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 24A, 600V, RDS(on)typ= 0.14@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 49nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a

 8.1. Size:716K  maple semi
 slp60r850s2 slf60r850s2.pdf pdf_icon

SLF60R190S2

SLP60R850S2/SLF60R850S2600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 600V, RDS(on) = 850m@VGS = 10 Vadvanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance,

 8.2. Size:1025K  maple semi
 slf60r650s2.pdf pdf_icon

SLF60R190S2

SLF60R650S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 600V, RDS(on)typ= 0.48@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 16nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, an

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Другие MOSFET... SLF5N50S , SLP5N60C , SLF5N60C , SLP5N65C , SLF5N65C , SLP5N65S , SLF5N65S , SLP60R190S2 , 2N7000 , SLP60R380S2 , SLF60R380S2 , SLP60R850S2 , SLF60R850S2 , SLP65R420S2 , SLF65R420S2 , SLP70R420S2 , SLF70R420S2 .

History: U1898 | CS1N60B1R | CEF02N6G | IRFB4020PBF | SLP60R190S2 | HFU1N60F | TK6A60W

 

 
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