SLP60R380S2 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SLP60R380S2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 94 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 29 ns
Cossⓘ - Выходная емкость: 38 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO220
Аналог (замена) для SLP60R380S2
SLP60R380S2 Datasheet (PDF)
slp60r380s2 slf60r380s2.pdf

SLP60R380S2/SLF60R380S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 11A, 600V, RDS(on)typ= 0.3@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 22nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
slp60r190s2 slf60r190s2.pdf

SLP60R190S2/SLF60R190S2600V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 20A, 600V, RDS(on)typ= 0.16@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 39nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingpe
slp60r850s2 slf60r850s2.pdf

SLP60R850S2/SLF60R850S2600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 600V, RDS(on) = 850m@VGS = 10 Vadvanced Super-Junction MOSFET technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance,
Другие MOSFET... SLP5N60C , SLF5N60C , SLP5N65C , SLF5N65C , SLP5N65S , SLF5N65S , SLP60R190S2 , SLF60R190S2 , IRFP260 , SLF60R380S2 , SLP60R850S2 , SLF60R850S2 , SLP65R420S2 , SLF65R420S2 , SLP70R420S2 , SLF70R420S2 , SLP70R600S2 .
History: BL30N30-A | WMB31430DN
History: BL30N30-A | WMB31430DN



Список транзисторов
Обновления
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
mje15031 | irfp150n | mj15025 | mp1620 | kta1381 | bf494 | 2sc1885 | skd502t