SLF70R420S2 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SLF70R420S2
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 37 ns
Cossⓘ - Выходная емкость: 37 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.42 Ohm
Тип корпуса: TO220F
Аналог (замена) для SLF70R420S2
SLF70R420S2 Datasheet (PDF)
slp70r420s2 slf70r420s2.pdf

SLP70R420S2/SLF70R420S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 11A, 700V, RDS(on)typ= 0.37@VGS = 10 VAdvanced Super-Junction technology. - Low gate charge ( typical 24nC)This advanced technology has been especially tailored to - High ruggednessminimize conduction loss, provide superior switching - Fast switc
slf70r380e7c.pdf

SLF70R380E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 700V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 24nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch
slp70r600s2 slf70r600s2.pdf

SLP70R600S2/SLF70R600S2700V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 7A, 700V, RDS(on)typ= 0.52@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 18nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingper
slf70r280e7c.pdf

SLF70R280E7C700V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 14A*, 700V, RDS(on),Typ = 230mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch
Другие MOSFET... SLF60R190S2 , SLP60R380S2 , SLF60R380S2 , SLP60R850S2 , SLF60R850S2 , SLP65R420S2 , SLF65R420S2 , SLP70R420S2 , 12N60 , SLP70R600S2 , SLF70R600S2 , SLP740UZ , SLF740UZ , SLP7N60C , SLF7N60C , SLP7N65C , SLF7N65C .
History: SLF70R600S2
History: SLF70R600S2



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