SLF7N70C. Аналоги и основные параметры

Наименование производителя: SLF7N70C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 40 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 35.5 ns

Cossⓘ - Выходная емкость: 110 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm

Тип корпуса: TO220F

Аналог (замена) для SLF7N70C

- подборⓘ MOSFET транзистора по параметрам

 

SLF7N70C даташит

 ..1. Size:1248K  maple semi
 slp7n70c slf7n70c.pdf pdf_icon

SLF7N70C

SLP7N70C / SLF7N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 700V, RDS(on)typ = 1.5 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching

 9.1. Size:301K  maple semi
 slp7n65c slf7n65c.pdf pdf_icon

SLF7N70C

SLP7N65C/SLF7N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 650V, RDS(on) typ. = 1.2 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p

 9.2. Size:353K  maple semi
 slp7n80c slf7n80c.pdf pdf_icon

SLF7N70C

SLP7N80C/SLF7N80C SLP7N80C/SLF7N80C 800V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 800V, RDS(on) = 1.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching Fast

 9.3. Size:360K  maple semi
 slp7n60c slf7n60c.pdf pdf_icon

SLF7N70C

SLP7N60C / SLF7N60C 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 7.0A, 600V, RDS(on)Typ. = 1.0 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 25nC) This advanced technology has been especially tailored to - High ruggedness minimize on-state resistance, provide superior switching - Fast switching

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SLF70R600S2, SLP740UZ, SLF740UZ, SLP7N60C, SLF7N60C, SLP7N65C, SLF7N65C, SLP7N70C, IRF1010E, SLP7N80C, SLF7N80C, SLP80R240SJ, SLF80R240SJ, SLB80R240SJ, SLP8N60C, SLF8N60C, SLP8N65C