SLF7N70C - аналоги и даташиты транзистора

 

SLF7N70C - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SLF7N70C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35.5 ns
   Cossⓘ - Выходная емкость: 110 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SLF7N70C

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLF7N70C Datasheet (PDF)

 ..1. Size:1248K  maple semi
 slp7n70c slf7n70c.pdf pdf_icon

SLF7N70C

SLP7N70C / SLF7N70C700V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 700V, RDS(on)typ = 1.5@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 23 nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switching

 9.1. Size:301K  maple semi
 slp7n65c slf7n65c.pdf pdf_icon

SLF7N70C

SLP7N65C/SLF7N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

 9.2. Size:353K  maple semi
 slp7n80c slf7n80c.pdf pdf_icon

SLF7N70C

SLP7N80C/SLF7N80CSLP7N80C/SLF7N80C800V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 800V, RDS(on) = 1.9@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 40nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching Fast

 9.3. Size:360K  maple semi
 slp7n60c slf7n60c.pdf pdf_icon

SLF7N70C

SLP7N60C / SLF7N60C600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.0A, 600V, RDS(on)Typ. = 1.0@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 25nC)This advanced technology has been especially tailored to - High ruggednessminimize on-state resistance, provide superior switching - Fast switching

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLF70R600S2 , SLP740UZ , SLF740UZ , SLP7N60C , SLF7N60C , SLP7N65C , SLF7N65C , SLP7N70C , IRF1010E , SLP7N80C , SLF7N80C , SLP80R240SJ , SLF80R240SJ , SLB80R240SJ , SLP8N60C , SLF8N60C , SLP8N65C .

History: SI2333CDS-T1-GE3 | 17N60 | 2SJ527S

 

 
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