SLF80R240SJ - описание и поиск аналогов

 

Аналоги SLF80R240SJ. Основные параметры


   Наименование производителя: SLF80R240SJ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 55 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для SLF80R240SJ

   - подбор ⓘ MOSFET транзистора по параметрам

 

SLF80R240SJ даташит

 ..1. Size:634K  maple semi
 slp80r240sj slf80r240sj slb80r240sj.pdf pdf_icon

SLF80R240SJ

SLB/F/P80R240SJ 800V N-Channel MOSFET Features General Description Features - 20A, 800V, RDS(on) typ.= 0.22 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 70nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been especially tailored - High ruggedness - Low gate charge ( ty

 8.1. Size:2464K  maple semi
 slf80r830gt.pdf pdf_icon

SLF80R240SJ

SLF80R830GT 800V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 7A*, 800V, RDS(on),Typ = 700m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 16nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin

 8.2. Size:614K  maple semi
 sld80r850sj slu80r850sj slp80r850sj slf80r850sj slb80r850sj sli80r850sj.pdf pdf_icon

SLF80R240SJ

SLD80R850SJ,SLU80R850SJ,SLP80R850SJ SLF80R850SJ, SLB80R850SJ, SLI80R850SJ 800V N-Channel MOSFET Features General Description Features -7A, 800V, RDS(on) typ.= 0.8 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 25nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been es

 8.3. Size:626K  maple semi
 sld80r500sj slu80r500sj slp80r500sj slf80r500sj slb80r500sj sli80r500sj.pdf pdf_icon

SLF80R240SJ

SLD80R500SJ,SLU80R500SJ,SLP80R500SJ SLF80R500SJ, SLB80R500SJ, SLI80R500SJ 800V N-Channel MOSFET Features General Description Features -11A, 800V, RDS(on) typ.= 0.46 @VGS = 10 V This Power MOSFET is produced using Maple semi s Advanced Super-Junction technology. - Low gate charge ( typical 38nC) - 7.6A, 500V, RDS(on) typ. = 0.5 @VGS = 10 V This advanced technology has been

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SLF7N60C , SLP7N65C , SLF7N65C , SLP7N70C , SLF7N70C , SLP7N80C , SLF7N80C , SLP80R240SJ , CS150N03A8 , SLB80R240SJ , SLP8N60C , SLF8N60C , SLP8N65C , SLF8N65C , SLW18N50C , SLW20N50C , SLW24N50C .

History: HY3003P | TN0200TS

 

 
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