LP2309LT3G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LP2309LT3G
Маркировка: P09
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.4 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 1.9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.3 nC
Время нарастания (tr): 33.1 ns
Выходная емкость (Cd): 23 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.215 Ohm
Тип корпуса: SOT23
Аналог (замена) для LP2309LT3G
LP2309LT3G Datasheet (PDF)
lp2309lt1g lp2309lt3g.pdf
LP2309LT1GP-Channel 60V (D-S) MOSFET1. FEATURESRDS(ON)215m , Vgs@-10V.RDS(ON)260m , Vgs@-4.5V.Super high density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC current capability.SOT23(TO-236)We declare that the material of product compliance with RoHS requirements and Halogen Free.2. APPLICATIONSPower Man
lp2307lt1g.pdf
LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V R Vgs@-4.5V, Ids@-4.7A = 60 mDS(ON), 3mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 100Features 1Advanced trench process technology 2High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO236AB)DSimple Drive Requirement Small Package Outline
lp2301alt1g.pdf
LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET FEATURES RDS(ON) 110m@VGS=-4.5V LP2301ALT1G RDS(ON) 150m@VGS=-2.5V Super high density cell design for extremely low RDS(ON) 3APPLICATIONS 1 Power Management in Note book 2 Portable Equipment SOT 23 Battery Powered System Load Switch DSC 3Ordering Inform
lp2305dslt1g s-lp2305dslt1g.pdf
LESHAN RADIO COMPANY, LTD.12V P-Channel Enhancement-Mode MOSFET LP2305DSLT1GV = -12V DSS-LP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 68mR 3A = 81DS(ON), Vgs@-2.5V, Ids@" mR 2A = 118 mDS(ON), Vgs@-1.8V, Ids@"3Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2SOT 23 (TO236AB)Fully Characterized Avalan
lp2307lt1g s-lp2307lt1g.pdf
LESHAN RADIO COMPANY, LTD.16V P-Channel Enhancement-Mode MOSFET LP2307LT1GVDS= -16V S-LP2307LT1GR Vgs@-4.5V, Ids@-4.7A = 70 mDS(ON), mRDS(ON), Vgs@-2.5V, Ids@-1.0A = 1103Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2S- Prefix for Automotive and Other Applications Requiring SOT 23 (TO236AB)Unique S
lp2301blt1g lp2301blt3g.pdf
LESHAN RADIO COMPANY, LTD.20V P-Channel Enhancement-Mode MOSFET LP2301BLT1GV = -20V DSR Vgs@-4.5V, Ids@-2.8A = 100 mDS(ON), m 3RDS(ON), Vgs@-2.5V, Ids@-2.0A = 150Features Advanced trench process technology 1High Density Cell Design For Ultra Low On-Resistance 2Fully Characterized Avalanche Voltage and Current SOT 23 (TO236AB)Improved Shoot-Through FOM
lp2305dslt1g.pdf
LESHAN RADIO COMPANY, LTD.8V P-Channel Enhancement-Mode MOSFET V = -8V DSLP2305DSLT1GRDS(ON), Vgs@-4.5V, Ids@"3.5A = 58mR 3A = 71DS(ON), Vgs@-2.5V, Ids@" mR 2A = 108 mDS(ON), Vgs@-1.8V, Ids@"3Features 1Advanced trench process technology 2High Density Cell Design For Ultra Low On-Resistance SOT 23 (TO236AB)Fully Characterized Avalanche Voltage and
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C