2N65M - описание и поиск аналогов

 ..1. Size:143K  jh
 2n65 2n65f 2n65e 2n65d 2n65n 2n65m.pdf 

R 2N65 S E M I C O N D U C T O R 650V N-Channel Power MOSFET FEATURES PRODUCT SUMMARY RDS(ON)

 0.1. Size:823K  st
 sty112n65m5.pdf 

STY112N65M5 N-channel 650 V, 0.019 , 96 A, MDmesh V Power MOSFET Max247 Features VDSS Order code RDS(on) max ID @TjMAX STY112N65M5 710 V

 0.2. Size:894K  st
 stw62n65m5.pdf 

STW62N65M5 Automotive-grade N-channel 650 V, 0.041 typ., 46 A MDmesh M5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW62N65M5 710 V 0.049 46 A Designed for automotive applications and AEC-Q101 qualified 3 2 Extremely low RDS(on) 1 Low gate charge and input capacitance TO-247 Excellent sw

 0.3. Size:935K  st
 std12n65m2.pdf 

STD12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (COSS) profile DPAK (TO-252) 100% avalanche tested Zener-protected Figure 1 Internal schematic diagram Applicatio

 0.4. Size:680K  st
 stl42n65m5.pdf 

STL42N65M5 N-channel 650 V, 0.070 , 34 A MDmesh V Power MOSFET in PowerFLAT 8x8 HV package Datasheet preliminary data Features VDSS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL42N65M5 710 V

 0.5. Size:460K  st
 stl12n65m2.pdf 

STL12N65M2 N-channel 650 V, 0.62 typ., 5 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STL12N65M2 650 V 0.75 5 A 48 W 1 Extremely low gate charge 2 3 Excellent output capacitance (COSS) profile 4 100% avalanche tested Zener-protected PowerFLAT 5x6 HV Ap

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 stb32n65m5 stf32n65m5 sti32n65m5 stp32n65m5 stw32n65m5.pdf 

STB32N65M5, STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 N-channel 650 V, 0.095 , 24 A, MDmesh V Power MOSFET in D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS@ Type RDS(on) max ID TJmax 3 3 1 2 3 1 2 STB32N65M5 710 V

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 stl22n65m5.pdf 

STL22N65M5 N-channel 650 V, 0.180 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet production data Features VDS @ RDS(on) Order code ID S(2) Bottom view TJmax max S(2) S(2) G(1) STL22N65M5 710 V 0.210 15 A(1) D(3) 1. The value is rated according to Rthj-case and limited by package. 100% avalanche tested PowerFLAT 8x8 HV Low

 0.8. Size:1097K  st
 stb42n65m5 stf42n65m5 sti42n65m5 stp42n65m5 stw42n65m5.pdf 

STx42N65M5 N-channel 650 V, 0.070 , 33 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 3 2 1 STB42N65M5 710 V

 0.9. Size:1040K  st
 std12n65m5 stf12n65m5 sti12n65m5 stp12n65m5 stu12n65m5.pdf 

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 , 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V

 0.10. Size:1374K  st
 stl12n65m5.pdf 

STL12N65M5 N-channel 650 V, 0.475 typ., 8.5 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV package Datasheet - production data Features Order code VDSS RDS(on) max ID STL12N65M5 710 V 0.530 8.5 A Outstanding RDS(on)*area 1 Extremely large avalanche performance 2 3 Gate charge minimized 4 TM Very low intrinsic capacitance PowerFLAT 5x6 HV 100% ava

 0.11. Size:837K  st
 stf12n65m2.pdf 

STF12N65M2 N-channel 650 V, 0.42 typ., 8 A MDmesh M2 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max ID STF12N65M2 650 V 0.5 8 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested 3 2 Zener-protected 1 Applications TO-220FP Switching applications Figure

 0.12. Size:113K  isahaya
 rt2n65m.pdf 

 0.13. Size:1225K  jilin sino
 jcs2n65vb jcs2n65rb jcs2n65cb jcs2n65fb jcs2n65mb jcs2n65mfb.pdf 

N R N-CHANNEL MOSFET JCS2N65B MAIN CHARACTERISTICS Package ID 2.0 A VDSS 650 V Rdson Vgs=10V 5.0 -MAX Qg-typ 5.9 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

 0.14. Size:479K  silan
 svf2n65f svf2n65n svf2n65mj svf2n65d.pdf 

SVF2N65F/N/MJ/D 2A 650V N SVF2N65F/N/MJ/D N MOS F-CellTM VDMOS

 0.15. Size:1088K  truesemi
 tsp12n65m tsf12n65m.pdf 

TSP12N65M/TSF12N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 12A,650V,Max.RDS(on)=0.75 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 52nC) minimize on-state resistance, provide superior switching High ruggedness performance, a