LNC06R062 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LNC06R062
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 13 ns
Cossⓘ - Выходная емкость: 393 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0062 Ohm
Тип корпуса: TO-220
Аналог (замена) для LNC06R062
LNC06R062 Datasheet (PDF)
lnc06r062 lnd06r062 lne06r062.pdf

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit
lnc06r079 lnd06r079 lne06r079.pdf

LNC06R079/LND06R079/LNE06R079Lonten N-channel 60V, 90A, 7.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 7.9mGStechnology. This advanced technology has been I 90ADespecially tailored to minimize on-state resistance,provide superior switching performance, and wit
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
lnh06r230 lng06r230 lnc06r230.pdf

LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
Другие MOSFET... 6N65D , LNB10R040W3 , LNB20N60 , LNB20N65 , LNB4N80 , LNC045R090 , LNC04R035B , LNC04R050 , IRF9540 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , LNC06R230 , LNC07R085H , LNC08R055W3 , LNC08R085 .
History: IRH9250 | LNC10N60 | VBZA4606 | PP4B10AT | NTBV45N06L | AOD2144 | CSD23203W
History: IRH9250 | LNC10N60 | VBZA4606 | PP4B10AT | NTBV45N06L | AOD2144 | CSD23203W



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