LNC06R230 - Даташиты. Аналоги. Основные параметры
Наименование производителя: LNC06R230
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 103 ns
Cossⓘ - Выходная емкость: 153 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: TO-220
Аналог (замена) для LNC06R230
LNC06R230 Datasheet (PDF)
lnh06r230 lng06r230 lnc06r230.pdf

LNH06R230/LNG06R230/LNC06R230Lonten N-channel 60V, 33A, 23m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 23mGStechnology. This advanced technology has been I 33ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnh06r200 lng06r200 lnc06r200.pdf

LNH06R200/LNG06R200/LNC06R200Lonten N-channel 60V, 35A, 20m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 20mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with
lnc06r062 lnd06r062 lne06r062.pdf

LNC06R062/LND06R062/LNE06R062 Lonten N-channel 60V, 120A, 6.2m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 60V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 6.2m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and wit
lnc06r140 lne06r140 lng06r140 lnh06r140.pdf

LNC06R140/LNE06R140/LNG06R140/LNH06R140Lonten N-channel 60V, 45A, 14m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 60VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 14mGStechnology. This advanced technology has been I 45ADespecially tailored to minimize on-state resistance,provide superior switching performance,
Другие MOSFET... LNC045R090 , LNC04R035B , LNC04R050 , LNC06R062 , LNC06R079 , LNC06R110 , LNC06R140 , LNC06R200 , IRF9540 , LNC07R085H , LNC08R055W3 , LNC08R085 , LNC08R160 , LNC08R220 , LNC10N60 , LNC10N65 , LNC10R040W3 .
History: KP7129A | SFW095N200C3 | 2SK3284 | 2SK3725-01 | TK19J55D | 2SK3646-01SJ | MMP60R290PTH
History: KP7129A | SFW095N200C3 | 2SK3284 | 2SK3725-01 | TK19J55D | 2SK3646-01SJ | MMP60R290PTH



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