Справочник MOSFET. LNE10R040W3

 

LNE10R040W3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LNE10R040W3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 147 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 117 nC
   trⓘ - Время нарастания: 56 ns
   Cossⓘ - Выходная емкость: 909 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для LNE10R040W3

 

 

LNE10R040W3 Datasheet (PDF)

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 lnc10r040w3 lnd10r040w3 lne10r040w3 lnb10r040w3.pdf

LNE10R040W3 LNE10R040W3

LNC10R040W3/LND10R040W3/LNE10R040W3/LNB10R040W3 Lonten N-channel 100V, 120A, 4.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field V 100V DSS effect transistors are using split gate trench DMOS R GS DS(on).max@ V =10V 4.0m technology. This advanced technology has been I 120A D especially tailored to minimize on-state resistance, provi

 8.1. Size:1003K  lonten
 lnc10r180 lnd10r180 lne10r180.pdf

LNE10R040W3 LNE10R040W3

LNC10R180\LND10R180/LNE10R180 Lonten N-channel 100V, 80A, 18m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 100V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 18m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with

 9.1. Size:1046K  lonten
 lnd10n60 lnc10n60 lne10n60 lnf10n60.pdf

LNE10R040W3 LNE10R040W3

LND10N60/LNC10N60/LNE10N60/LNF10N60 Lonten N-channel 600V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 0.9 superior switching performance and high avalance Qg,typ 31.4 nC energy. Features Low RDS(on) Low gate

 9.2. Size:1293K  lonten
 lnd10n65 lnc10n65 lne10n65 lnf10n65 lndn10n65.pdf

LNE10R040W3 LNE10R040W3

LND10N65/LNC10N65/LNE10N65/LNF10N65/LNDN10N65Lonten N-channel 650V, 10A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 650VDSSadvanced planer VDMOS technology. The I 10ADresulting device has low conduction resistance, R 1.0DS(on),maxsuperior switching performance and high avalanche Q 34.2 nCg,typenergy.Features Low RDS(on)

 9.3. Size:1051K  lonten
 lnd10n65 lnc10n65 lne10n65 lnf10n65.pdf

LNE10R040W3 LNE10R040W3

LND10N65/LNC10N65/LNE10N65/LNF10N65 Lonten N-channel 650V, 10A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 650V advanced planer VDMOS technology. The ID 10A resulting device has low conduction resistance, RDS(on),max 1.0 superior switching performance and high avalanche Qg,typ 34.2 nC energy. Features Low RDS(on) Low gate

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