Справочник MOSFET. STP10NA40

 

STP10NA40 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STP10NA40
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 400 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.75 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 54 nC
   trⓘ - Время нарастания: 115 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
   Тип корпуса: TO220

 Аналог (замена) для STP10NA40

 

 

STP10NA40 Datasheet (PDF)

 ..1. Size:395K  st
stp10na40.pdf

STP10NA40
STP10NA40

STP10NA40STP10NA40FIN - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP10NA40 400 V

 8.1. Size:1627K  st
stb10n60m2 std10n60m2 stp10n60m2 stu10n60m2.pdf

STP10NA40
STP10NA40

STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, DPAK, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABTABRDS(on) 3 Order codes VDS @ TJmax max ID131DPAKSTB10N60M2D 2 PAKSTD10N60M2650 V 0.600 7.5 ASTP10N60M2TABTABSTU10N60M23 Extremely low gate ch

 8.2. Size:384K  st
stp10nk70z.pdf

STP10NA40
STP10NA40

STP10NK70ZSTP10NK70ZFPN-CHANNEL 700V - 0.75 - 8.6A TO-220/TO-220FPZener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK70Z 700 V

 8.3. Size:901K  st
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf

STP10NA40
STP10NA40

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 8.4. Size:455K  st
stp10nk80zfp stp10nk80z stw10nk80z.pdf

STP10NA40
STP10NA40

STP10NK80ZFPSTP10NK80Z - STW10NK80ZN-channel 800V - 0.78 - 9A - TO-220/FP-TO-247Zener-protected superMESHTM MOSFETGeneral featuresType VDSS RDS(on) ID PwSTP10NK80Z 800V

 8.5. Size:339K  st
stp10nb50 stp10nb50fp.pdf

STP10NA40
STP10NA40

STP10NB50STP10NB50FPN - CHANNEL 500V - 0.55 - 10.6A - TO-220/TO-220FPPowerMESH MOSFETTYPE V R IDSS DS(on) DSTP10NB50 500 V

 8.6. Size:997K  st
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf

STP10NA40
STP10NA40

STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V

 8.7. Size:1328K  st
stb10n95k5 stf10n95k5 stp10n95k5 stw10n95k5.pdf

STP10NA40
STP10NA40

STB10N95K5, STF10N95K5, STP10N95K5, STW10N95K5N-channel 950 V, 0.65 typ., 8 A Zener-protected SuperMESH 5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247Datasheet - production dataTAB Features3Order codes VDS RDS(on) max ID PTOT123D PAK STB10N95K5 130 W21STF10N95K5 30 WTO-220FP950 V 0.8 8 ASTP10N95K5TAB130 WSTW10N95K5 Worldwide best FOM

 8.8. Size:439K  st
stp10nk80z stp10nk80zfp stw10nk80z.pdf

STP10NA40
STP10NA40

STP10NK80Z, STP10NK80ZFP,STW10NK80ZN-channel 800 V, 0.78 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220, TO-220FP and TO-247 packagesDatasheet production dataFeaturesTABType VDSS RDS(on) ID PwSTP10NK80Z 800V

 8.9. Size:1300K  st
stb10n65k3 stfi10n65k3 stp10n65k3.pdf

STP10NA40
STP10NA40

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

 8.10. Size:938K  st
stb10nk60z stp10nk60z stp10nk60zfp stw10nk60z.pdf

STP10NA40
STP10NA40

STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V

 8.11. Size:458K  st
stp10nk80z.pdf

STP10NA40
STP10NA40

STP10NK80Z - STP10NK80ZFPSTW10NK80ZN-CHANNEL 800V - 0.78 - 9A TO-220/TO-220FP/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK80Z 800 V

 8.12. Size:274K  st
stp10nk70zfp stp10nk70z.pdf

STP10NA40
STP10NA40

STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V

 8.13. Size:1072K  st
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf

STP10NA40
STP10NA40

STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V

 8.14. Size:525K  st
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf

STP10NA40
STP10NA40

STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V

 8.15. Size:948K  st
stf10n62k3 stfi10n62k3 sti10n62k3 stp10n62k3.pdf

STP10NA40
STP10NA40

STF10N62K3, STFI10N62K3,STI10N62K3, STP10N62K3N-channel 620 V, 0.68 typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, IPAKFP, IPAK, TO-220 packagesDatasheet - production dataFeaturesRDS(on) Type VDSS max ID Pw32STF10N62K31128.4 A(1) 30 W3TO-220FPSTFI10N62K3IPAKFP620 V

 8.16. Size:503K  st
stp10nk50z.pdf

STP10NA40
STP10NA40

STP10NK50ZN-channel 500 V, 0.55 , 9 A Zener-protected SuperMESH Power MOSFETs in TO-220 packageDatasheet obsolete productFeaturesOrder code VDSS RDS(on) max ID PTOTTABSTP10NK50Z 500 V

 8.17. Size:1129K  st
std10nm60nd stf10nm60nd stp10nm60nd.pdf

STP10NA40
STP10NA40

STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. jmax.STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance

 8.18. Size:528K  st
stp10nk50z stf10nk50z.pdf

STP10NA40
STP10NA40

STP10NK50ZSTF10NK50ZN-CHANNEL 500V - 0.55 - 9A TO-220 / TO-220FPZener-Protected SuperMESHMOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PwSTP10NK50Z 500 V

 8.19. Size:858K  st
stb10nk60z stp10nk60z stw10nk60z.pdf

STP10NA40
STP10NA40

STB10NK60Z, STP10NK60ZSTW10NK60ZN-channel 650 V, 0.65 , 10 A, SuperMESH Power MOSFETZener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247FeaturesRDS(on) Type VDSS ID Pwmax3STB10NK60Z-1 600 V

 8.20. Size:149K  st
stp10nc50fp stp10nc50.pdf

STP10NA40
STP10NA40

STP10NC50STP10NC50FPN - CHANNEL 500V - 0.48 - 10A - TO-220/TO-220FPPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP10NC50 500 V

 8.21. Size:718K  st
stf10n105k5 stp10n105k5 stw10n105k5.pdf

STP10NA40
STP10NA40

STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data Features TABR DS(on)Order codes V I P DS D TOTmax. STF10N105K5 30 W 33 22 1STP10N105K5 1050 V 1.3 6 A 130 W 1TO-220STW10N105K5 130 W TO-220FP Industrys lowest RDS(on) 3 In

 8.22. Size:280K  st
stp10nk70z stp10nk70zfp.pdf

STP10NA40
STP10NA40

STP10NK70ZFPSTP10NK70ZN-CHANNEL 700V - 0.75 - 8.6A - TO220-TO220FPZener-Protected SuperMESH MOSFETGeneral features PackageVDSS RDS(on) IDType PwSTP10NK70Z 700 V

 8.23. Size:684K  st
stp10nk60z.pdf

STP10NA40
STP10NA40

STP10NK60Z/FP, STB10NK60Z/-1STW10NK60ZN-CHANNEL 600V-0.65-10A TO-220/FP/D2PAK/I2PAK/TO-247Zener-Protected SuperMESHPower MOSFETTYPE VDSS RDS(on) ID PwSTP10NK60Z 600 V

 8.24. Size:951K  st
std10nm50n stf10nm50n stp10nm50n.pdf

STP10NA40
STP10NA40

STD10NM50NSTF10NM50N, STP10NM50NN-channel 500 V, 0.53 , 7 A TO-220, TO-220FP, DPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max33221STD10NM50N1TO-220FP TO-220STF10NM50N 550 V

 8.25. Size:1300K  st
stb10n65k3 stf10n65k3 stfi10n65k3 stp10n65k3.pdf

STP10NA40
STP10NA40

STB10N65K3, STF10N65K3, STFI10N65K3, STP10N65K3N-channel 650 V, 0.75 typ., 10 A SuperMESH3 Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS RDS(on) max ID PTOT313 STB10N65K3 150 W2D2PAK 1STF10N65K3TO-220FP650 V 1 10 A 35 WSTFI10N65K3TABSTP10N65K3 150 W 100% avalanche tested3

 8.26. Size:182K  st
stp10nb20.pdf

STP10NA40
STP10NA40

STP10NB20STP10NB20FPN - CHANNEL ENHANCEMENT MODEPowerMESH MOSFETPRELIMINARY DATATYPE V R IDSS DS(on) DSTP10NB20 200 V

 8.27. Size:938K  st
stb10nk60z-1 stb10nk60zt4 stp10nk60zfp.pdf

STP10NA40
STP10NA40

STB10NK60Z, STP10NK60Z,STP10NK60ZFP, STW10NK60ZN-channel 600 V, 0.65 typ., 10 A SuperMESH Power MOSFETin I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packagesDatasheet - production dataFeaturesTABRDS(on) Type VDSS ID PwmaxTAB33 2STB10NK60Z-1 600 V

 8.28. Size:348K  st
stp10n80k5.pdf

STP10NA40
STP10NA40

STP10N80K5DatasheetN-channel 800 V, 0.470 typ., 9 A MDmesh K5 Power MOSFET in a TO-220 packageFeaturesOrder code VDS RDS(on ) max. ID PTOTTABSTP10N80K5 800 V 0.600 9 A 130 W Industrys lowest RDS(on) x area32 Industrys best FoM (figure of merit)1TO-220 Ultra-low gate charge 100% avalanche tested Zener-protectedD(2, TAB)Applications

 8.29. Size:201K  inchange semiconductor
stp10nk60zfp.pdf

STP10NA40
STP10NA40

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP10NK60ZFPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATIN

 8.30. Size:205K  inchange semiconductor
stp10nm65n.pdf

STP10NA40
STP10NA40

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP10NM65NFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

 8.31. Size:253K  inchange semiconductor
stp10nk70zfp.pdf

STP10NA40
STP10NA40

isc N-Channel MOSFET Transistor STP10NK70ZFPFEATURESDrain Current : I = 8.6A@ T =25D CDrain Source Voltage: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)@V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

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