Справочник MOSFET. LNG045R090

 

LNG045R090 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LNG045R090
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 45 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 49.3 nC
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для LNG045R090

 

 

LNG045R090 Datasheet (PDF)

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 lnc045r090 lng045r090 lnh045r090.pdf

LNG045R090 LNG045R090

LNC045R090/LNG045R090/LNH045R090Lonten N-channel 45V, 70A, 9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 9mGStechnology. This advanced technology has been I 70ADespecially tailored to minimize on-state resistance,provide superior switching performance, and with

 ..2. Size:1074K  lonten
 lnh045r090 lng045r090.pdf

LNG045R090 LNG045R090

LNH045R090/LNG045R090 Lonten N-channel 45V, 70A, 9m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 9m technology. This advanced technology has been ID 70A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high

 6.1. Size:1003K  lonten
 lnh045r055 lng045r055.pdf

LNG045R090 LNG045R090

LNH045R055/LNG045R055 Lonten N-channel 45V, 85A, 5.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.5m technology. This advanced technology has been ID 85A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand

 7.1. Size:1239K  lonten
 lnh045r140 lng045r140.pdf

LNG045R090 LNG045R090

LNH045R140/LNG045R140 Lonten N-channel 45V, 43A, 14m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 45V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 14m technology. This advanced technology has been ID 43A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi

 7.2. Size:895K  lonten
 lnh045r210 lng045r210.pdf

LNG045R090 LNG045R090

LNH045R210/LNG045R210Lonten N-channel 45V, 35A, 21m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 45VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 21mGStechnology. This advanced technology has been I 35ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withstand h

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