LNG04R035B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LNG04R035B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 130 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 139 nC
Время нарастания (tr): 17 ns
Выходная емкость (Cd): 677 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0035 Ohm
Тип корпуса: TO-252
Аналог (замена) для LNG04R035B
LNG04R035B Datasheet (PDF)
lng04r035b lnh04r035b.pdf
LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta
lnh04r075 lng04r075.pdf
LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lnh04r050 lng04r050.pdf
LNH04R050/LNG04R050 Lonten N-channel 40V, 100A, 5.0m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 5.0m technology. This advanced technology has been ID 100A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand
lnh04r120 lng04r120.pdf
LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lng04r165 lnh04r165.pdf
LNG04R165/LNH04R165Lonten N-channel 40V, 39A, 16.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 16.5mGStechnology. This advanced technology has been I 39ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withPin C
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