LNH04R165 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: LNH04R165
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 39 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 18.6 ns
Cossⓘ - Выходная емкость: 127 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0165 Ohm
Тип корпуса: TO-251
LNH04R165 Datasheet (PDF)
lng04r165 lnh04r165.pdf

LNG04R165/LNH04R165Lonten N-channel 40V, 39A, 16.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using trench DMOS RDS(on).max@ V =10V 16.5mGStechnology. This advanced technology has been I 39ADespecially tailored to minimize on-state resistance,provide superior switching performance, and withPin C
lnh04r120 lng04r120.pdf

LNH04R120/LNG04R120 Lonten N-channel 40V, 47A, 12m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 12m technology. This advanced technology has been ID 47A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand high
lnh04r075 lng04r075.pdf

LNH04R075/LNG04R075 Lonten N-channel 40V, 80A, 7.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 7.5m technology. This advanced technology has been ID 80A especially tailored to minimize on-state resistance, provide superior switching performance, and with stand hi
lng04r035b lnh04r035b.pdf

LNG04R035B/ LNH04R035B Lonten N-channel 40V, 120A, 3.5m Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 40V effect transistors are using trench DMOS RDS(on).max@ VGS=10V 3.5m technology. This advanced technology has been ID 120A especially tailored to minimize on-state resistance, provide superior switching performance, and with sta
Другие MOSFET... LNH045R055 , LNH045R090 , LNH045R140 , LNH045R210 , LNH04R035B , LNH04R050 , LNH04R075 , LNH04R120 , AO4407 , LNH05R075 , LNH05R100 , LNH05R155 , LNH05R230 , LNH06R062 , LNH06R079 , LNH06R110 , LNH06R140 .
History: R6046FNZ1 | NCE3025Q



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