Справочник MOSFET. LSB55R140GF

 

LSB55R140GF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSB55R140GF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 205 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 76.2 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.14 Ohm
   Тип корпуса: TO-247
 

 Аналог (замена) для LSB55R140GF

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSB55R140GF Datasheet (PDF)

 ..1. Size:1326K  lonten
 lsb55r140gf lsc55r140gf lsd55r140gf lse55r140gf lsf55r140gf.pdf pdf_icon

LSB55R140GF

LSB55R140GF/LSC55R140GF/LSD55R140GF/LSE55R140GF/LSF55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 ..2. Size:1193K  lonten
 lsb55r140gf lsd55r140gf lse55r140gf.pdf pdf_icon

LSB55R140GF

LSB55R140GF/LSD55R140GF/LSE55R140GFLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40nCg,typsu

 4.1. Size:1326K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt lsc55r140gt.pdf pdf_icon

LSB55R140GF

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT/LSC55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which

 4.2. Size:1268K  lonten
 lsb55r140gt lsd55r140gt lse55r140gt lsf55r140gt.pdf pdf_icon

LSB55R140GF

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GTLonFETLonten N-channel 550V, 23A, 0.14 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 600VDS j,maxadvanced super junction technology. The resulting R 0.14DS(on),maxdevice has extremely low on resistance, making it I 69ADMespecially suitable for applications which require Q 40n

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... LPL4459 , LPSA3481 , LPSA3487 , LPSC2301 , LPSC3481 , LPSC3487 , LSB55R050GT , LSB55R066GT , MMD60R360PRH , LSB55R140GT , LSB60R030HT , LSB60R039GT , LSB60R066GT , LSB60R070HT , LSB60R092GF , LSB60R092GT , LSB60R099HT .

History: AP30P10GS-HF | BUZ77B | IPAN60R210PFD7S | P6503FMA | NVMFS5833N | 2N65G-TF2-T | RJK03H1DPA

 

 
Back to Top

 


 
.