LSB60R039GT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSB60R039GT
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 500 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 110 nC
Время нарастания (tr): 52 ns
Выходная емкость (Cd): 4800 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.039 Ohm
Тип корпуса: TO-247
Аналог (замена) для LSB60R039GT
LSB60R039GT Datasheet (PDF)
lsb60r039gt.pdf
LSB60R039GT LonFET Lonten N-channel 600V, 80A, 0.039 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.039 device has extremely low on resistance, making it IDM 240A especially suitable for applications which require Qg,typ 110nC superior power density
lsb60r030ht.pdf
LSB60R030HTLonFETLonten N-channel 600V, 100A, 0.030 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.030DS(on),maxdevice has extremely low on resistance, making it I 300ADMespecially suitable for applications which require Q 138nCg,typsuperior power densit
lsb60r092gf lsd60r092gf lse60r092gf.pdf
LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC
lsb60r066gt.pdf
LSB60R066GT LonFET Lonten N-channel 600V, 54A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 87nC superior power density
lsb60r092gt lsd60r092gt lse60r092gt.pdf
LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC
lsb60r070ht lsd60r070ht.pdf
LSB60R070HT/ LSD60R070HTLonFETLonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.07DS(on),maxdevice has extremely low on resistance, making it I 141ADMespecially suitable for applications which require Q 68nCg,typsuperior pow
lsb60r099ht lsd60r099ht lse60r099ht.pdf
LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ
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