LSB60R280HT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSB60R280HT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 130 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 56 ns
Cossⓘ - Выходная емкость: 41.8 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
Тип корпуса: TO-247
Аналог (замена) для LSB60R280HT
LSB60R280HT Datasheet (PDF)
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280ht lse60r280ht lsb60r280ht.pdf
LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl
lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf
LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab
lsd60r280ht lsg60r280ht lsh60r280ht lsf60r280htlse60r280ht lsb60r280ht.pdf
LSD60R280HT/LSG60R280HT/LSH60R280HT/LSF60R280HT/ LSE60R280HT/ LSB60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appl
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf
LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require
lsb60r092gf lsd60r092gf lse60r092gf.pdf
LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf
LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg
lsb60r066gt.pdf
LSB60R066GT LonFET Lonten N-channel 600V, 54A, 0.066 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.066 device has extremely low on resistance, making it IDM 135A especially suitable for applications which require Qg,typ 87nC superior power density
lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf
LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo
lsb60r092gt lsd60r092gt lse60r092gt.pdf
LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC
lsb60r170gt lsd60r170gt.pdf
LSB60R170GT/ LSD60R170GT LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.17 device has extremely low on resistance, making it IDM 60A especially suitable for applications which require Qg,typ 39nC superior pow
lsb60r030ht.pdf
LSB60R030HTLonFETLonten N-channel 600V, 100A, 0.030 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.030DS(on),maxdevice has extremely low on resistance, making it I 300ADMespecially suitable for applications which require Q 138nCg,typsuperior power densit
lsb60r070ht lsd60r070ht.pdf
LSB60R070HT/ LSD60R070HTLonFETLonten N-channel 600V, 47A, 0.07 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.07DS(on),maxdevice has extremely low on resistance, making it I 141ADMespecially suitable for applications which require Q 68nCg,typsuperior pow
lsb60r170gf lsd60r170gf.pdf
LSB60R170GF/ LSD60R170GF LonFET Lonten N-channel 600V, 20A, 0.17 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.17 The resulting device has extremely low on IDM 60A resistance, making it especially suitable for Qg,typ 39nC applications which require superior powe
lsb60r039gt.pdf
LSB60R039GT LonFET Lonten N-channel 600V, 80A, 0.039 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.039 device has extremely low on resistance, making it IDM 240A especially suitable for applications which require Qg,typ 110nC superior power density
lsb60r099ht lsd60r099ht lse60r099ht.pdf
LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
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