LSB65R041GF. Аналоги и основные параметры
Наименование производителя: LSB65R041GF
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 78 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 52 ns
Cossⓘ - Выходная емкость: 4800 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.041 Ohm
Тип корпуса: TO-247
Аналог (замена) для LSB65R041GF
- подборⓘ MOSFET транзистора по параметрам
LSB65R041GF даташит
lsb65r041gf.pdf
LSB65R041GF LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density
lsb65r041gt.pdf
LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density
lsb65r099gf lsd65r099gf lse65r099gf.pdf
LSB65R099GF/LSD65R099GF/LSE65R099GF LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 66nC g,typ
lsb65r070gf.pdf
LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density
Другие MOSFET... LSB60R092GT , LSB60R099HT , LSB60R105HF , LSB60R125HT , LSB60R170GF , LSB60R170GT , LSB60R180HT , LSB60R280HT , 50N06 , LSB65R041GT , LSB65R070GF , LSB65R099GF , LSB65R099GT , LSB65R125HT , LSB65R180GF , LSB65R180GT , LSB65R180HT .
History: 2N65KL-TM3-T | SMK830FZ | KD4953 | P0260AD | IXFC24N50 | LSB65R125HT
History: 2N65KL-TM3-T | SMK830FZ | KD4953 | P0260AD | IXFC24N50 | LSB65R125HT
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Список транзисторов
Обновления
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