LSB65R380HT - описание и поиск аналогов

LSB65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which require Q 14.7 nC g,typ superior power density

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GF LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. R 0.18 DS(on),max The resulting device has extremely low on I 60A DM resistance, making it especially suitable for Q 39nC g,typ a

LSB65R099GF/LSD65R099GF/LSE65R099GF LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 66nC g,typ

LSB65R041GT LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GT LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. RDS(on),max 0.18 I 60A The resulting device has extremely low on DM Q 39nC resistance, making it especially suitable for g,typ app

LSB65R180HT/ LSC65R180HT/ LSD65R180HT / LSE65R180HT/ LSF65R180HT/LSNC65R180HT LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. R 0.18 DS(on),max The resulting device has extremely low on I 60A DM resistance, making it especially suitable for Q

LSB65R070GF LonFET Lonten N-channel 650V, 47A, 0.07 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.070 device has extremely low on resistance, making it IDM 141A especially suitable for applications which require Qg,typ 87nC superior power density

LSB65R041GF LonFET Lonten N-channel 650V, 78A, 0.041 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.041 device has extremely low on resistance, making it IDM 230A especially suitable for applications which require Qg,typ 110nC superior power density

LSB65R125HT/LSC65R125HT/LSD65R125HT/ LSE65R125HT/LSNC65R125HT/LSF65R125HT LonFET Lonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.125 DS(on),max device has extremely low on resistance, making it I 75A DM especially suitable for app

LSB65R099GT/LSD65R099GT/LSE65R099GT LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.099 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC