Справочник MOSFET. LSC60R105HF

 

LSC60R105HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: LSC60R105HF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 248 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 4.5 V
   Максимально допустимый постоянный ток стока |Id|: 40 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 49.8 nC
   Время нарастания (tr): 58.6 ns
   Выходная емкость (Cd): 104 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.105 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для LSC60R105HF

 

 

LSC60R105HF Datasheet (PDF)

 ..1. Size:1094K  lonten
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf

LSC60R105HF
LSC60R105HF

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

 7.1. Size:987K  lonten
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdf

LSC60R105HF
LSC60R105HF

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

 7.2. Size:1125K  lonten
lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdf

LSC60R105HF
LSC60R105HF

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

 8.1. Size:1336K  lonten
lsd60r280ht lsg60r280ht lsh60r280ht lsb60r280ht lsf60r280ht lse60r280ht lsc60r280ht.pdf

LSC60R105HF
LSC60R105HF

LSD60R280HT/LSG60R280HT/LSH60R280HT/LSB60R280HTLSF60R280HT/ LSE60R280HT/ LSC60R280HTLonFETLonten N-channel 600V, 15A, 0.28 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.28DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitab

 8.2. Size:1295K  lonten
lsc60r650ht lsd60r650ht lsg60r650ht lsh60r650ht.pdf

LSC60R105HF
LSC60R105HF

LSC60R650HT/LSD60R650HT/LSG60R650HT/LSH60R650HTLonFETLonten N-channel 600V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for applications which require Q 13.1 n

 8.3. Size:1269K  lonten
lsd60r290hf lsg60r290hf lsh60r290hf lsc60r290hf lsf60r290hf lse60r290hf.pdf

LSC60R105HF
LSC60R105HF

LSD60R290HF/LSG60R290HF/LSH60R290HF//LSC60R290HFLSF60R290HF/ LSE60R290HFLonFETLonten N-channel 600V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

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History: AFN12N60T220T

 

 
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