LSC65R125HT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSC65R125HT
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 216 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4.5 V
Максимально допустимый постоянный ток стока |Id|: 25 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 36 nC
Время нарастания (tr): 46 ns
Выходная емкость (Cd): 85.7 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.125 Ohm
Тип корпуса: TO-220
Аналог (замена) для LSC65R125HT
LSC65R125HT Datasheet (PDF)
lsb65r125ht lsc65r125ht lsd65r125ht lse65r125ht lsnc65r125ht lsf65r125ht.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSB65R125HT/LSC65R125HT/LSD65R125HT/LSE65R125HT/LSNC65R125HT/LSF65R125HTLonFETLonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.125DS(on),maxdevice has extremely low on resistance, making it I 75ADMespecially suitable for app
lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GFLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q 39nCg,typa
lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. RDS(on),max 0.18I 60AThe resulting device has extremely low on DMQ 39nCresistance, making it especially suitable for g,typapp
lsb65r180ht lsc65r180ht lsd65r180ht lse65r180ht lsf65r180ht lsnc65r180ht.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
LSB65R180HT/ LSC65R180HT/ LSD65R180HT/ LSE65R180HT/ LSF65R180HT/LSNC65R180HTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NCE0224DA