LSC65R180GT - описание и поиск аналогов

 

LSC65R180GT. Аналоги и основные параметры

Наименование производителя: LSC65R180GT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 205 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 33 ns

Cossⓘ - Выходная емкость: 68.6 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm

Тип корпуса: TO-220

Аналог (замена) для LSC65R180GT

- подборⓘ MOSFET транзистора по параметрам

 

LSC65R180GT даташит

 ..1. Size:1136K  lonten
 lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf pdf_icon

LSC65R180GT

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GT LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. RDS(on),max 0.18 I 60A The resulting device has extremely low on DM Q 39nC resistance, making it especially suitable for g,typ app

 4.1. Size:1188K  lonten
 lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf pdf_icon

LSC65R180GT

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GF LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. R 0.18 DS(on),max The resulting device has extremely low on I 60A DM resistance, making it especially suitable for Q 39nC g,typ a

 5.1. Size:1171K  lonten
 lsb65r180ht lsc65r180ht lsd65r180ht lse65r180ht lsf65r180ht lsnc65r180ht.pdf pdf_icon

LSC65R180GT

LSB65R180HT/ LSC65R180HT/ LSD65R180HT / LSE65R180HT/ LSF65R180HT/LSNC65R180HT LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. R 0.18 DS(on),max The resulting device has extremely low on I 60A DM resistance, making it especially suitable for Q

 7.1. Size:1180K  lonten
 lsb65r125ht lsc65r125ht lsd65r125ht lse65r125ht lsnc65r125ht lsf65r125ht.pdf pdf_icon

LSC65R180GT

LSB65R125HT/LSC65R125HT/LSD65R125HT/ LSE65R125HT/LSNC65R125HT/LSF65R125HT LonFET Lonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.125 DS(on),max device has extremely low on resistance, making it I 75A DM especially suitable for app

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