LSC65R570GT - описание и поиск аналогов

 

LSC65R570GT. Аналоги и основные параметры

Наименование производителя: LSC65R570GT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 83 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

Cossⓘ - Выходная емкость: 23 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.57 Ohm

Тип корпуса: TO-220

Аналог (замена) для LSC65R570GT

- подборⓘ MOSFET транзистора по параметрам

 

LSC65R570GT даташит

 ..1. Size:1184K  lonten
lsc65r570gt lsd65r570gt lsg65r570gt lsh65r570gt lse65r570gt lsf65r570gt.pdfpdf_icon

LSC65R570GT

LSC65R570GT/LSD65R570GT/LSG65R570GT/ LSH65R570GT/ LSE65R570GT / LSF65R570GT LonFET Lonten N-channel 650V, 7A, 0.57 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.57 device has extremely low on resistance, making it IDM 21A especially suitable for ap

 8.1. Size:1512K  lonten
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdfpdf_icon

LSC65R570GT

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HT LSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it

 8.2. Size:1271K  lonten
lsc65r290hf lsg65r290hf lsh65r290hf lsd65r290hf lsf65r290hf lse65r290hf.pdfpdf_icon

LSC65R570GT

LSC65R290HF/LSG65R290HF/LSH65R290HF/ LSD65R290HF/LSF65R290HF/ LSE65R290HF LonFET Lonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.29 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for appli

 8.3. Size:1188K  lonten
lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdfpdf_icon

LSC65R570GT

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GF LonFET Lonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated V @ T 700V DS j,max using advanced super junction technology. R 0.18 DS(on),max The resulting device has extremely low on I 60A DM resistance, making it especially suitable for Q 39nC g,typ a

Другие MOSFET... LSC65R180GF , LSC65R180GT , LSC65R180HT , LSC65R280HT , LSC65R290HF , LSC65R380GF , LSC65R380GT , LSC65R380HT , IRLB4132 , LSC65R650HT , LSC70R380GT , LSC70R640GT , LSC80R350GT , LSC80R680GT , LSC80R980GT , LSD50R160HT , LSD55R066GT .

History: AP20P02GJ | AP15T25H-HF | AP04N60J | SI1032X | LSD65R570GT | AP3P9R0J | IRFS240B

 

 

 

 

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