Справочник MOSFET. LSD65R099GF

 

LSD65R099GF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSD65R099GF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 43.8 ns
   Cossⓘ - Выходная емкость: 116 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для LSD65R099GF

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSD65R099GF Datasheet (PDF)

 ..1. Size:1060K  lonten
lsb65r099gf lsd65r099gf lse65r099gf.pdfpdf_icon

LSD65R099GF

LSB65R099GF/LSD65R099GF/LSE65R099GFLonFETLonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 66nCg,typ

 4.1. Size:940K  lonten
lsb65r099gt lsd65r099gt lse65r099gt.pdfpdf_icon

LSD65R099GF

LSB65R099GT/LSD65R099GT/LSE65R099GT LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.099 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 8.1. Size:1512K  lonten
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdfpdf_icon

LSD65R099GF

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it

 8.2. Size:1271K  lonten
lsc65r290hf lsg65r290hf lsh65r290hf lsd65r290hf lsf65r290hf lse65r290hf.pdfpdf_icon

LSD65R099GF

LSC65R290HF/LSG65R290HF/LSH65R290HF/LSD65R290HF/LSF65R290HF/ LSE65R290HFLonFETLonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.29DS(on),maxdevice has extremely low on resistance, making it I 45ADMespecially suitable for appli

Другие MOSFET... LSD60R170GT , LSD60R180HT , LSD60R1K4HT , LSD60R240HT , LSD60R280HT , LSD60R290HF , LSD60R380HT , LSD60R650HT , P0903BDG , LSD65R099GT , LSD65R105HF , LSD65R125HT , LSD65R180GF , LSD65R180GT , LSD65R180HT , LSD65R1K5HT , LSD65R280HT .

History: NVD3055-094 | TSM2N70CZ | HGS098N10A | 2SK2771-01R | NCEA65NF036T4 | HM7000 | AP9970GW-HF

 

 
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