LSD65R099GT - описание и поиск аналогов

 

LSD65R099GT. Аналоги и основные параметры

Наименование производителя: LSD65R099GT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 43.8 ns

Cossⓘ - Выходная емкость: 2500 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm

Тип корпуса: TO-220F

Аналог (замена) для LSD65R099GT

- подборⓘ MOSFET транзистора по параметрам

 

LSD65R099GT даташит

 ..1. Size:940K  lonten
lsb65r099gt lsd65r099gt lse65r099gt.pdfpdf_icon

LSD65R099GT

LSB65R099GT/LSD65R099GT/LSE65R099GT LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.099 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 4.1. Size:1060K  lonten
lsb65r099gf lsd65r099gf lse65r099gf.pdfpdf_icon

LSD65R099GT

LSB65R099GF/LSD65R099GF/LSE65R099GF LonFET Lonten N-channel 650V, 40A, 0.099 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.099 DS(on),max device has extremely low on resistance, making it I 120A DM especially suitable for applications which require Q 66nC g,typ

 8.1. Size:1512K  lonten
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdfpdf_icon

LSD65R099GT

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HT LSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it

 8.2. Size:1271K  lonten
lsc65r290hf lsg65r290hf lsh65r290hf lsd65r290hf lsf65r290hf lse65r290hf.pdfpdf_icon

LSD65R099GT

LSC65R290HF/LSG65R290HF/LSH65R290HF/ LSD65R290HF/LSF65R290HF/ LSE65R290HF LonFET Lonten N-channel 650V, 15A, 0.29 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.29 DS(on),max device has extremely low on resistance, making it I 45A DM especially suitable for appli

Другие MOSFET... LSD60R180HT , LSD60R1K4HT , LSD60R240HT , LSD60R280HT , LSD60R290HF , LSD60R380HT , LSD60R650HT , LSD65R099GF , 2SK3568 , LSD65R105HF , LSD65R125HT , LSD65R180GF , LSD65R180GT , LSD65R180HT , LSD65R1K5HT , LSD65R280HT , LSD65R290HF .

History: LDP9933ET1G | FDP027N08B | IRFH5304

 

 

 

 

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