Справочник MOSFET. LSD65R125HT

 

LSD65R125HT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSD65R125HT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 34.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 46 ns
   Cossⓘ - Выходная емкость: 85.7 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.125 Ohm
   Тип корпуса: TO-220F
 

 Аналог (замена) для LSD65R125HT

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSD65R125HT Datasheet (PDF)

 ..1. Size:1180K  lonten
 lsb65r125ht lsc65r125ht lsd65r125ht lse65r125ht lsnc65r125ht lsf65r125ht.pdf pdf_icon

LSD65R125HT

LSB65R125HT/LSC65R125HT/LSD65R125HT/LSE65R125HT/LSNC65R125HT/LSF65R125HTLonFETLonten N-channel 650V, 25A, 0.125 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.125DS(on),maxdevice has extremely low on resistance, making it I 75ADMespecially suitable for app

 7.1. Size:1188K  lonten
 lsb65r180gf lsc65r180gf lsd65r180gf lse65r180gf lsf65r180gf.pdf pdf_icon

LSD65R125HT

LSB65R180GF/ LSC65R180GF/ LSD65R180GF/ LSE65R180GF/ LSF65R180GFLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. R 0.18DS(on),maxThe resulting device has extremely low on I 60ADMresistance, making it especially suitable for Q 39nCg,typa

 7.2. Size:1176K  lonten
 lsd65r1k5ht lsg65r1k5ht lsh65r1k5ht lse65r1k5ht lss65r1k5ht.pdf pdf_icon

LSD65R125HT

LSD65R1K5HT/LSG65R1K5HT/ LSH65R1K5HT/ LSE65R1K5HT/ LSS65R1K5HTLonFETLonten N-channel 650V, 3A, 1.5 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 1.5DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which re

 7.3. Size:1136K  lonten
 lsb65r180gt lsc65r180gt lsd65r180gt lse65r180gt lsf65r180gt.pdf pdf_icon

LSD65R125HT

LSB65R180GT/ LSC65R180GT/ LSD65R180GT/ LSE65R180GT/ LSF65R180GTLonFETLonten N-channel 650V, 20A, 0.18 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated V @ T 700VDS j,maxusing advanced super junction technology. RDS(on),max 0.18I 60AThe resulting device has extremely low on DMQ 39nCresistance, making it especially suitable for g,typapp

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... LSD60R240HT , LSD60R280HT , LSD60R290HF , LSD60R380HT , LSD60R650HT , LSD65R099GF , LSD65R099GT , LSD65R105HF , 13N50 , LSD65R180GF , LSD65R180GT , LSD65R180HT , LSD65R1K5HT , LSD65R280HT , LSD65R290HF , LSD65R380GF , LSD65R380GT .

History: BUK92150-55A | SVS20N60SD2TR | CEM9926 | AP2762I-H-HF | ME4894 | PH4330L

 

 
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