LSD65R380HT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: LSD65R380HT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 31.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 14.7 nC
trⓘ - Время нарастания: 32 ns
Cossⓘ - Выходная емкость: 216 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: TO-220F
Аналог (замена) для LSD65R380HT
LSD65R380HT Datasheet (PDF)
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdf
LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsg65r380ht.pdf
LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSG65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 0.38 device has extremely low on resistance, making it IDM 30A especially suitable for applications wh
lsc65r380gt lsd65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf
LSC65R380GT/LSD65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsc65r380gf lsd65r380gf lse65r380gf lsf65r380gf lsg65r380gf.pdf
LSC65R380GF/LSD65R380GF/LSE65R380GF/LSF65R380GF/LSG65R380GFLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which
lsc65r380gt lsd65r380gt lsh65r380gt lse65r380gt lsf65r380gt lsg65r380gt.pdf
LSC65R380GT/LSD65R380GT/LSH65R380GT/LSE65R380GT/LSF65R380GT/LSG65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applic
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918