LSD80R350GT - Даташиты. Аналоги. Основные параметры
Наименование производителя: LSD80R350GT
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 37 ns
Cossⓘ - Выходная емкость: 42 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.35 Ohm
Тип корпуса: TO-220F
Аналог (замена) для LSD80R350GT
LSD80R350GT Datasheet (PDF)
lsb80r350gt lsc80r350gt lsd80r350gt lse80r350gt lsf80r350gt.pdf
LSB80R350GT /LSC80R350GT/LSD80R350GT/LSE80R350GT/LSF80R350GTLonFETLonten N-channel 800V, 15A, 0.35 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The R 0.35DS(on),maxresulting device has extremely low on resistance, I 45ADMmaking it especially suitable for applications which
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LSC80R680GT/LSD80R680GT/LSE80R680GT/LSF80R680GT/LSG80R680GT/LSH80R680GTLonFETLonten N-channel 800V, 8A, 0.68 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.68DS(on),maxdevice has extremely low on resistance, making it I 8ADMespecially suitable for applicat
lsd80r2k8gt.pdf
LSD80R2K8GTLonFETLonten N-channel 800V, 2A, 2.8 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 2.8DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applications which require Q 7.7nCg,typsuperior power density and ou
lsc80r980gt lsd80r980gt lse80r980gt lsf80r980gt lsg80r980gt lsh80r980gt.pdf
LSC80R980GT/LSD80R980GT/LSE80R980GT/LSF80R980GT/LSG80R980GT/LSH80R980GTLonFETLonten N-channel 800V, 5A, 0.98 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 850VDS j,maxadvanced super junction technology. The resulting R 0.98DS(on),maxdevice has extremely low on resistance, making it I 5ADMespecially suitable for applicat
Другие MOSFET... LSD65R570GT , LSD65R650HT , LSD65R930GT , LSD70R1KGT , LSD70R380GT , LSD70R450GT , LSD70R640GT , LSD80R2K8GT , 7N60 , LSD80R680GT , LSD80R980GT , LSDN55R140GT , LSDN60R950HT , LSDN65R380GT , LSDN65R380HT , LSDN65R650HT , LSDN65R950HT .
History: LSC60R125HT | AOC2802 | WMN05N100C2 | LSDN65R650HT | SM8008NSK | 2SK750 | SM6018NSU
History: LSC60R125HT | AOC2802 | WMN05N100C2 | LSDN65R650HT | SM8008NSK | 2SK750 | SM6018NSU
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