Справочник MOSFET. LSDN60R950HT

 

LSDN60R950HT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSDN60R950HT
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 14.1 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.95 Ohm
   Тип корпуса: TO-220FT
 

 Аналог (замена) для LSDN60R950HT

   - подбор ⓘ MOSFET транзистора по параметрам

 

LSDN60R950HT Datasheet (PDF)

 ..1. Size:1001K  lonten
lsdn60r950ht lsg60r950ht lsh60r950ht.pdfpdf_icon

LSDN60R950HT

LSDN60R950HT/LSG60R950HT/ LSH60R950HTLonFETLonten N-channel 600V, 4A, 950m LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The R 950mDS(on),maxresulting device has extremely low on I 12ADMresistance, making it especially suitable for Q 7.6nCg,typapplications which require

 9.1. Size:1512K  lonten
lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdfpdf_icon

LSDN60R950HT

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HTLSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it

 9.2. Size:1132K  lonten
lsdn65r380gt.pdfpdf_icon

LSDN60R950HT

LSDN65R380GTLonFETLonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.38DS(on),maxdevice has extremely low on resistance, making it I 30ADMespecially suitable for applications which require Q 22.8nCg,typsuperior power density

 9.3. Size:1447K  lonten
lsc65r650ht lsd65r650ht lsdn65r650ht lse65r650ht lsg65r650ht lsh65r650ht.pdfpdf_icon

LSDN60R950HT

LSC65R650HT/LSD65R650HT/ LSDN65R650HT/ LSE65R650HT/LSG65R650HT/LSH65R650HTLonFETLonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 700VDS j,maxadvanced super junction technology. The resulting R 0.65DS(on),maxdevice has extremely low on resistance, making it I 21ADMespecially suitable for appl

Другие MOSFET... LSD70R380GT , LSD70R450GT , LSD70R640GT , LSD80R2K8GT , LSD80R350GT , LSD80R680GT , LSD80R980GT , LSDN55R140GT , 60N06 , LSDN65R380GT , LSDN65R380HT , LSDN65R650HT , LSDN65R950HT , LSE50R160HT , LSE55R066GT , LSE55R140GF , LSE55R140GT .

History: 1N60L-TF2-T | TJ10S04M3L | DMP4050SSD | HGN035N10AL | LSB60R030HT | LSC65R380GF | HY1908U

 

 
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