LSDN65R650HT - описание и поиск аналогов

 

LSDN65R650HT. Аналоги и основные параметры

Наименование производителя: LSDN65R650HT

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6.13 ns

Cossⓘ - Выходная емкость: 325 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm

Тип корпуса: TO-220NF

Аналог (замена) для LSDN65R650HT

- подборⓘ MOSFET транзистора по параметрам

 

LSDN65R650HT даташит

 ..1. Size:1447K  lonten
 lsc65r650ht lsd65r650ht lsdn65r650ht lse65r650ht lsg65r650ht lsh65r650ht.pdf pdf_icon

LSDN65R650HT

LSC65R650HT/LSD65R650HT/ LSDN65R650HT / LSE65R650HT/LSG65R650HT/LSH65R650HT LonFET Lonten N-channel 650V, 7A, 0.65 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.65 DS(on),max device has extremely low on resistance, making it I 21A DM especially suitable for appl

 7.1. Size:1512K  lonten
 lsc65r380ht lsd65r380ht lse65r380ht lsf65r380ht lsdn65r380ht lsh65r380ht lsg65r380ht lsnc65r380ht lsn65r380ht.pdf pdf_icon

LSDN65R650HT

LSC65R380HT /LSD65R380HT / LSE65R380HT /LSF65R380HT/LSDN65R380HT LSH65R380HT/LSG65R380HT/LSNC65R380HT/LSN65R380HT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it

 7.2. Size:1132K  lonten
 lsdn65r380gt.pdf pdf_icon

LSDN65R650HT

LSDN65R380GT LonFET Lonten N-channel 650V, 11A, 0.38 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using V @ T 700V DS j,max advanced super junction technology. The resulting R 0.38 DS(on),max device has extremely low on resistance, making it I 30A DM especially suitable for applications which require Q 22.8nC g,typ superior power density

 7.3. Size:973K  lonten
 lsdn65r950ht lsg65r950ht lsh65r950ht.pdf pdf_icon

LSDN65R650HT

LSDN65R950HT/LSG65R950HT/ LSH65R950HT LonFET Lonten N-channel 650V, 4A, 950m LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 700V advanced super junction technology. The resulting RDS(on),max 950m device has extremely low on resistance, making it IDM 12A especially suitable for applications which require Qg,typ 7.6nC

ПОКАЗАТЬ ЕЩЁ

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