Справочник MOSFET. LSE60R092GT

 

LSE60R092GT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSE60R092GT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 278 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 43.8 ns
   Cossⓘ - Выходная емкость: 2500 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.092 Ohm
   Тип корпуса: TO-263
     - подбор MOSFET транзистора по параметрам

 

LSE60R092GT Datasheet (PDF)

 ..1. Size:941K  lonten
 lsb60r092gt lsd60r092gt lse60r092gt.pdf pdf_icon

LSE60R092GT

LSB60R092GT/LSD60R092GT/LSE60R092GT LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 4.1. Size:934K  lonten
 lsb60r092gf lsd60r092gf lse60r092gf.pdf pdf_icon

LSE60R092GT

LSB60R092GF/LSD60R092GF/LSE60R092GF LonFET Lonten N-channel 600V, 40A, 0.092 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.092 device has extremely low on resistance, making it IDM 120A especially suitable for applications which require Qg,typ 66nC

 6.1. Size:1047K  lonten
 lsb60r099ht lsd60r099ht lse60r099ht.pdf pdf_icon

LSE60R092GT

LSB60R099HT/LSD60R099HT/LSE60R099HTLonFETLonten N-channel 600V, 40A, 0.099 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.099DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require Q 48nCg,typ

 8.1. Size:1094K  lonten
 lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdf pdf_icon

LSE60R092GT

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APM4550K | AO6804A | PHB8N50E | SUP40N10-30 | WMJ38N60C2 | SSP7N80A | IXTH160N075T

 

 
Back to Top

 


 
.