Справочник MOSFET. LSE60R1K4HT

 

LSE60R1K4HT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: LSE60R1K4HT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 26.8 ns
   Cossⓘ - Выходная емкость: 74.8 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-263
     - подбор MOSFET транзистора по параметрам

 

LSE60R1K4HT Datasheet (PDF)

 ..1. Size:1103K  lonten
lsd60r1k4ht lsg60r1k4ht lsh60r1k4ht lse60r1k4ht.pdfpdf_icon

LSE60R1K4HT

LSD60R1K4HT/LSG60R1K4HT/ LSH60R1K4HT/ LSE60R1K4HTLonFETLonten N-channel 600V, 3A, 1.4 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 1.4DS(on),maxdevice has extremely low on resistance, making it I 9ADMespecially suitable for applications which require Q 5.8nC

 7.1. Size:1094K  lonten
lsb60r105hf lsd60r105hf lse60r105hf lsc60r105hf.pdfpdf_icon

LSE60R1K4HT

LSB60R105HF/LSD60R105HF/LSE60R105HF/LSC60R105HFLonFETLonten N-channel 600V, 40A, 0.105 LonFETTM Power MOSFETDescription Product SummaryLonFETTM Power MOSFET is fabricated using V @ T 650VDS j,maxadvanced super junction technology. The resulting R 0.105DS(on),maxdevice has extremely low on resistance, making it I 120ADMespecially suitable for applications which require

 7.2. Size:987K  lonten
lsb60r125ht lsc60r125ht lsd60r125ht lse60r125ht.pdfpdf_icon

LSE60R1K4HT

LSB60R125HT/LSC60R125HT/LSD60R125HT/LSE60R125HT LonFET Lonten N-channel 600V, 25A, 0.125 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated using VDS @ Tj,max 650V advanced super junction technology. The resulting RDS(on),max 0.125 device has extremely low on resistance, making it IDM 75A especially suitable for applications which require Qg

 7.3. Size:1125K  lonten
lsb60r180ht lsc60r180ht lsd60r180ht lse60r180ht lsf60r180ht lsnc60r180ht.pdfpdf_icon

LSE60R1K4HT

LSB60R180HT/ LSC60R180HT/ LSD60R180HT / LSE60R180HT/ LSF60R180HT/LSNC60R180HT LonFET Lonten N-channel 600V, 20A, 0.18 LonFETTM Power MOSFET Description Product Summary LonFETTM Power MOSFET is fabricated VDS @ Tj,max 650V using advanced super junction technology. RDS(on),max 0.18 The resulting device has extremely low on IDM 60A resistance, making it especially suitable fo

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK3991-ZK | AS3423 | STP5NB40 | WM03P42M2 | SE3N150P | HTN036P03 | 2SK3532

 

 
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